Metal - Insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors

Y. Iye, A. Oiwa, A. Endo, S. Katsumoto, F. Matsukura, A. Shen, H. Ohno, H. Munekata

Research output: Contribution to journalConference articlepeer-review

72 Citations (Scopus)


Structural, magnetic and transport properties of diluted magnetic semiconductors, (Ga, Mn)As and (In, Mn)As, have been investigated. Manganese can be substitutionally doped into the group III site of the zincblend structure up to several percent. With Mn content of a few percent, these systems exhibit ferromagnetism at low temperatures. The highest Curie temperature so far achieved is ∼ 100 K for (Ga, Mn)As. The saturated magnetization values are consistent with S= 5/2 local moment, suggesting divalent Mn which acts as an acceptor. The system becomes metallic with increasing Mn content, but a further increase of Mn content tends to decrease the hole density and increase disorder so that the system becomes nonmetallic again at higher Mn concentrations. Large negative magnetoresistance and highly anisotropic transport are observed in the semiconducting samples at low temperatures. The magnetic anisotropy in ultrathin films is found to be strongly affected by the lattice-mismatch-induced strain.

Original languageEnglish
Pages (from-to)88-95
Number of pages8
JournalMaterials Science and Engineering: B
Issue number1-2
Publication statusPublished - 1999 Aug 16
EventProceedings of the 1998 7th NEC Symposium on Fundamental Approaches to New Material Phases: Phase Control in Spin-Charge-Orbital Complex Systems - Nasu, Japan
Duration: 1998 Oct 111998 Oct 15


  • Anomalous hall effect
  • Carrier-induced ferromagnetism
  • Diluted magnetic semiconductor
  • Lattice-mismatch-induced strain
  • Metal-insulator transition
  • Negative magnetoresistance


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