Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation

We have investigated an atomic layer deposition (ALD) of ZrO₂ or HfO₂ by using a metal-organic (MO) precursor. As MO precursors are very sensitive to H₂O and have much carbon content, we used oxygen plasma instead of H₂O in order to suppress the background reaction with H₂O and reduce carbon contamination. As a result, we achieved an ALD proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H₂O oxidation.