Metal organic atomic layer deposition of metal silicate film for high-k gate dielectrics

Kazuhiko Endo; Toru Tatsumi

doi:10.1143/JJAP.43.L1296

Metal organic atomic layer deposition of metal silicate film for high-k gate dielectrics

Kazuhiko Endo, Toru Tatsumi

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

NEC Corporation

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated the use of atomic layer deposition to fabricate metal silicate film for high-k gate dielectrics. We used a metal organic precursor and alternate exposures of Ar plasma to achieve ion-assisted mixing of metal atoms into the substrate during each ALD cycle. The concentration of metal atoms was varied by changing the length of the cycles. The electrical characteristics of the silicate film were better than those of film fabricated using O₂ plasma or H₂O irradiation.

Original language	English
Pages (from-to)	L1296-L1298
Journal	Japanese Journal of Applied Physics
Volume	43
Issue number	10 A
DOIs	https://doi.org/10.1143/JJAP.43.L1296
Publication status	Published - 2004 Oct 1

Keywords

Atomic layer deposition
High-k dielectric
Plasma mixing
Silicate
Zirconium

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abstract = "We investigated the use of atomic layer deposition to fabricate metal silicate film for high-k gate dielectrics. We used a metal organic precursor and alternate exposures of Ar plasma to achieve ion-assisted mixing of metal atoms into the substrate during each ALD cycle. The concentration of metal atoms was varied by changing the length of the cycles. The electrical characteristics of the silicate film were better than those of film fabricated using O2 plasma or H2O irradiation.",

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N2 - We investigated the use of atomic layer deposition to fabricate metal silicate film for high-k gate dielectrics. We used a metal organic precursor and alternate exposures of Ar plasma to achieve ion-assisted mixing of metal atoms into the substrate during each ALD cycle. The concentration of metal atoms was varied by changing the length of the cycles. The electrical characteristics of the silicate film were better than those of film fabricated using O2 plasma or H2O irradiation.

AB - We investigated the use of atomic layer deposition to fabricate metal silicate film for high-k gate dielectrics. We used a metal organic precursor and alternate exposures of Ar plasma to achieve ion-assisted mixing of metal atoms into the substrate during each ALD cycle. The concentration of metal atoms was varied by changing the length of the cycles. The electrical characteristics of the silicate film were better than those of film fabricated using O2 plasma or H2O irradiation.

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KW - High-k dielectric

KW - Plasma mixing

KW - Silicate

KW - Zirconium

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Metal organic atomic layer deposition of metal silicate film for high-k gate dielectrics

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