Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film

Xi Shen; Akira Chikamatsu; Kei Shigematsu; Yasushi Hirose; Tomoteru Fukumura; Tetsuya Hasegawa

doi:10.1063/1.4893732

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn₄N epitaxial thin film

Xi Shen, Akira Chikamatsu, Kei Shigematsu, Yasushi Hirose, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

We report the electrical transport properties of ferrimagnetic Mn ₄N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn₄N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16MJ/m³, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125μΩcm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

Original language	English
Article number	072410
Journal	Applied Physics Letters
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.4893732
Publication status	Published - 2014 Aug 18
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{c577fa31bf5d47eb9004424024adc2f6,

title = "Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film",

abstract = "We report the electrical transport properties of ferrimagnetic Mn 4N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn4N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16MJ/m3, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125μΩcm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.",

author = "Xi Shen and Akira Chikamatsu and Kei Shigematsu and Yasushi Hirose and Tomoteru Fukumura and Tetsuya Hasegawa",

year = "2014",

month = aug,

day = "18",

doi = "10.1063/1.4893732",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film

AU - Shen, Xi

AU - Chikamatsu, Akira

AU - Shigematsu, Kei

AU - Hirose, Yasushi

AU - Fukumura, Tomoteru

AU - Hasegawa, Tetsuya

PY - 2014/8/18

Y1 - 2014/8/18

N2 - We report the electrical transport properties of ferrimagnetic Mn 4N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn4N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16MJ/m3, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125μΩcm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

AB - We report the electrical transport properties of ferrimagnetic Mn 4N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn4N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16MJ/m3, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125μΩcm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

UR - http://www.scopus.com/inward/record.url?scp=84929410258&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929410258&partnerID=8YFLogxK

U2 - 10.1063/1.4893732

DO - 10.1063/1.4893732

M3 - Article

AN - SCOPUS:84929410258

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072410

ER -

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn₄N epitaxial thin film

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