@inproceedings{b3a728c2e5934694bf79407513f5b8bf,
title = "Metallurgical and electrical characterization of ultrathin CoTix liner/barrier for Cu interconnects",
abstract = "This paper reports an amorphous CoTix alloy as a single-layer liner/barrier material for intermediate interconnects in place of bilayer Ta/TaN materials. The CoTix layer was found to enhance adhesion of Cu/SiO2. The CoTix layer stayed amorphous after annealing at 400°C, and started to crystallize at 500°C. Capacitance-voltage measurement of the samples showed no interdiffusion of Cu ions into SiO2 after annealing up to 600°C and after bias thermal stress at 250°C at 3 MV/cm. All the obtained results showed that the amorphous CoTix alloy is a promising material for a liner/barrier layer in advanced technology node.",
keywords = "Co alloy, diffusion barrier, interconnect, LSI",
author = "Maryamsadat Hosseini and Junichi Koike",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Interconnect Technology Conference, IITC 2017 ; Conference date: 16-05-2017 Through 18-05-2017",
year = "2017",
month = jul,
day = "5",
doi = "10.1109/IITC-AMC.2017.7968959",
language = "English",
series = "IITC 2017 - 2017 IEEE International Interconnect Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "IITC 2017 - 2017 IEEE International Interconnect Technology Conference",
address = "United States",
}