Mg-induced Si(111)3 × 1 structure studied by photoelectron spectroscopy

K. S. An, R. J. Park, J. S. Kim, C. Y. Park, C. Y. Kim, J. W. Chung, T. Abukawa, S. Kono, T. Kinoshita, A. Kakizaki, T. Ishii

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By means of angle resolved photoelectron spectroscopy using synchrotron radiation, we have measured the valence band and surface sensitive Si 2p core-level spectra for the Si(111)3 × 1Mg surface. The dispersion of the valence band shows the fact that this surface has a semiconducting property and two surface states in the projected bulk band gap at the K̄ point. From the fitting results of the Si 2p core-level spectra, we find that the two surface shifted core-level components, S′1 and S′2 stem from the Si atom with single dangling bond and the Si atom bonding to the Mg atom, respectively. From experimental observations we suggest that the Si(111)3 × 1Mg structure is formed by ordering of Mg atoms on the ideal Si(111)1 × 1 surface, not by reconstruction of Si atoms of the substrate.

Original languageEnglish
Pages (from-to)L789-L794
JournalSurface Science
Issue number1-2
Publication statusPublished - 1995 Aug 20


  • Angle resolved photoemission
  • Low index single crystal surfaces
  • Magnesium
  • Semiconducting surfaces
  • Silicon
  • Soft X-ray photoelectron spectroscopy
  • Surface electronic phenomena


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