MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma; S. Ikeda; J. H. Park; H. Yamamoto; H. Gan; K. Miura; H. Hasegawa; J. Hayakawa; F. Matsukura; H. Ohno

doi:10.1063/1.3265740

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, H. Ohno

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127 Citations (Scopus)

Abstract

The authors studied an effect of ferromagnetic (Co₂₀ Fe ₆₀ B₂₀ or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (T_a) of 200 °C and then decreased rapidly at T_a over 250 °C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in situ annealed at 350 °C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by postannealing at T_a =200 °C.

Original language	English
Article number	232516
Journal	Applied Physics Letters
Volume	95
Issue number	23
DOIs	https://doi.org/10.1063/1.3265740
Publication status	Published - 2009

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title = "MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers",

abstract = "The authors studied an effect of ferromagnetic (Co20 Fe 60 B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (Ta) of 200 °C and then decreased rapidly at Ta over 250 °C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in situ annealed at 350 °C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by postannealing at Ta =200 °C.",

author = "K. Mizunuma and S. Ikeda and Park, {J. H.} and H. Yamamoto and H. Gan and K. Miura and H. Hasegawa and J. Hayakawa and F. Matsukura and H. Ohno",

note = "Funding Information: This work was supported in part by the “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next-Generation Information Technology of MEXT. The authors wish to thank Y. Ohno for discussion and I. Morita and T. Hirata for their technical support in MTJ fabrication and discussion. ",

year = "2009",

doi = "10.1063/1.3265740",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

AU - Mizunuma, K.

AU - Ikeda, S.

AU - Park, J. H.

AU - Yamamoto, H.

AU - Gan, H.

AU - Miura, K.

AU - Hasegawa, H.

AU - Hayakawa, J.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was supported in part by the “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next-Generation Information Technology of MEXT. The authors wish to thank Y. Ohno for discussion and I. Morita and T. Hirata for their technical support in MTJ fabrication and discussion.

PY - 2009

Y1 - 2009

N2 - The authors studied an effect of ferromagnetic (Co20 Fe 60 B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (Ta) of 200 °C and then decreased rapidly at Ta over 250 °C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in situ annealed at 350 °C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by postannealing at Ta =200 °C.

AB - The authors studied an effect of ferromagnetic (Co20 Fe 60 B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (Ta) of 200 °C and then decreased rapidly at Ta over 250 °C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in situ annealed at 350 °C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by postannealing at Ta =200 °C.

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DO - 10.1063/1.3265740

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232516

ER -

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

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