MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy

H. Yuji, K. Nakahara, K. Tamura, S. Akasaka, A. Sasaki, T. Tanabe, H. Takasu, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Citations (Scopus)


Thin films of ZnO and MgxZn1-xO were epitaxially grown on Zn-polar ZnO substrates by plasma assisted molecular beam epitaxy. The miscut of c-plane ZnO substrates toward the [1-100] axis direction leads to a flat substrate surface with straight step edges. The growth mode of epitaxial ZnO films significantly depended on the growth temperature, and a substrate temperature over 800°C was needed for flat film surfaces with monolayer-height steps. Photoluminescence (PL) peak originating from the n = 2 state of A-free excitons was observed at 12 K for the ZnO films grown under stoichiometric and O-rich growth conditions. MgxZn1-xO films were also fabricated under Zn-rich conditions. The film surface exhibited a step-and-terrace structure. The effective PL lifetime of Mg 0.08Zn0.92O film was as long as 1.9 ns, which is the highest value ever reported, presumably due to a high purity level of the film.

Original languageEnglish
Title of host publicationZinc Oxide Materials and Devices III
Publication statusPublished - 2008
EventZinc Oxide Materials and Devices III - San Jose, CA, United States
Duration: 2008 Jan 202008 Jan 23

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceZinc Oxide Materials and Devices III
Country/TerritoryUnited States
CitySan Jose, CA


  • Homoepitaxy
  • MBE
  • MgZnO
  • Photoluminescence
  • Surface morphology
  • ZnO
  • ZnO substrate


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