MgZnO/ZnO heterostructures with electron mobility exceeding 1 × 10 6 cm 2 /Vs

Joseph Falson; Yusuke Kozuka; Masaki Uchida; Jurgen H. Smet; Taka Hisa Arima; Atsushi Tsukazaki; Masashi Kawasaki

doi:10.1038/srep26598

MgZnO/ZnO heterostructures with electron mobility exceeding 1 × 10 6 cm 2 /Vs

Joseph Falson, Yusuke Kozuka, Masaki Uchida, Jurgen H. Smet, Taka Hisa Arima, Atsushi Tsukazaki, Masashi Kawasaki

Materials Property Division

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

The inherently complex chemical and crystallographic nature of oxide materials has suppressed the purities achievable in laboratory environments, obscuring the rich physical degrees of freedom these systems host. In this manuscript we provide a systematic approach to defect identification and management in oxide molecular beam epitaxy grown MgZnO/ZnO heterostructures which host two-dimensional electron systems. We achieve samples displaying electron mobilities in excess of 1 × 10 6 cm 2 /Vs. This data set for the MgZnO/ZnO system firmly establishes that the crystalline quality has become comparable to traditional semiconductor materials.

Original language	English
Article number	26598
Journal	Scientific reports
Volume	6
DOIs	https://doi.org/10.1038/srep26598
Publication status	Published - 2016 May 27

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abstract = "The inherently complex chemical and crystallographic nature of oxide materials has suppressed the purities achievable in laboratory environments, obscuring the rich physical degrees of freedom these systems host. In this manuscript we provide a systematic approach to defect identification and management in oxide molecular beam epitaxy grown MgZnO/ZnO heterostructures which host two-dimensional electron systems. We achieve samples displaying electron mobilities in excess of 1 × 10 6 cm 2 /Vs. This data set for the MgZnO/ZnO system firmly establishes that the crystalline quality has become comparable to traditional semiconductor materials.",

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AU - Falson, Joseph

AU - Kozuka, Yusuke

AU - Uchida, Masaki

AU - Smet, Jurgen H.

AU - Arima, Taka Hisa

AU - Tsukazaki, Atsushi

AU - Kawasaki, Masashi

PY - 2016/5/27

Y1 - 2016/5/27

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AB - The inherently complex chemical and crystallographic nature of oxide materials has suppressed the purities achievable in laboratory environments, obscuring the rich physical degrees of freedom these systems host. In this manuscript we provide a systematic approach to defect identification and management in oxide molecular beam epitaxy grown MgZnO/ZnO heterostructures which host two-dimensional electron systems. We achieve samples displaying electron mobilities in excess of 1 × 10 6 cm 2 /Vs. This data set for the MgZnO/ZnO system firmly establishes that the crystalline quality has become comparable to traditional semiconductor materials.

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MgZnO/ZnO heterostructures with electron mobility exceeding 1 × 10 6 cm 2 /Vs

Abstract

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