MgZnO/ZnO heterostructures with electron mobility exceeding 1 × 10 6 cm 2 /Vs

Joseph Falson, Yusuke Kozuka, Masaki Uchida, Jurgen H. Smet, Taka Hisa Arima, Atsushi Tsukazaki, Masashi Kawasaki

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)


The inherently complex chemical and crystallographic nature of oxide materials has suppressed the purities achievable in laboratory environments, obscuring the rich physical degrees of freedom these systems host. In this manuscript we provide a systematic approach to defect identification and management in oxide molecular beam epitaxy grown MgZnO/ZnO heterostructures which host two-dimensional electron systems. We achieve samples displaying electron mobilities in excess of 1 × 10 6 cm 2 /Vs. This data set for the MgZnO/ZnO system firmly establishes that the crystalline quality has become comparable to traditional semiconductor materials.

Original languageEnglish
Article number26598
JournalScientific reports
Publication statusPublished - 2016 May 27

ASJC Scopus subject areas

  • General


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