Abstract
Magnetic strips aimed at high-frequency carrier-type magnetic field sensors were studied by using various strip widths in a carrier frequency range of gigahertz to obtain conditions for large impedance change. The impedance change was attributed to a magnetic resonance effect. It was shown that dc magnetic field regions at which the maximum change of impedance occur for wide strip elements were closely related to the applied carrier frequencies as expected theoretically. The dc magnetic field for the maximum sensitivity decreased as strips become narrow.
Original language | English |
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Pages (from-to) | 2004-2006 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 37 |
Issue number | 4 I |
DOIs | |
Publication status | Published - 2001 Jul |
Event | 8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States Duration: 2001 Jan 7 → 2001 Jan 11 |
Keywords
- Ferromagnetic resonance
- GHz band carrier
- High-frequency carrier
- Magnetic field sensor
- Narrow strip
- Thin film
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering