The device concept, fabrication, emission and focussing characteristics of the microelectron field emitter array with the focus lenses were discussed. The device was aimed at low-energy, multielectron beam lithography application. The device was also monolithically fabricated on conventional silicon on insulator (SOI) wafer using the Si microfabrication process. The emitter-lens leak current and the emitter-gate were found to be less then 1% compared with the emission current.
|Number of pages
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - 2004 May