TY - GEN
T1 - Microfabricated vanadium oxide resonant thermal sensor with a high temperature coefficient of resonant frequency
AU - Inomata, Naoki
AU - Pan, Libao
AU - Toda, Masaya
AU - Ono, Takahito
N1 - Funding Information:
This work was supported in part by JSPS KAKENHI Grant Number 15K17450, and also supported in part by Special Coordination Funds for Promoting Science and Technology, Formation of Innovation Center for Fusion of Advanced Technologies.
Publisher Copyright:
© 2016 IEEE.
PY - 2016/2/26
Y1 - 2016/2/26
N2 - This study describes our newly fabricated resonant thermal sensors based on vanadium oxide and investigates the temperature dependences of their resonant frequencies and Q factor. The deposited vanadium oxide thin films comprise 55% VO2 and 45% V2O5. The resonant frequency of the fabricated vanadium oxide resonators linearly varies with temperature, and the value of temperature coefficient of the resonant frequency is -1308 ppm/K in the range of 20-100°C. The averaged Q factor in this range was 540. The temperature and thermal resolution of the vanadium oxide resonator are estimated as 1.69 mKWHz and 4.3 nW/√Hz, respectively, which are higher than those of a Si resonator having similar dimensions and under similar conditions.
AB - This study describes our newly fabricated resonant thermal sensors based on vanadium oxide and investigates the temperature dependences of their resonant frequencies and Q factor. The deposited vanadium oxide thin films comprise 55% VO2 and 45% V2O5. The resonant frequency of the fabricated vanadium oxide resonators linearly varies with temperature, and the value of temperature coefficient of the resonant frequency is -1308 ppm/K in the range of 20-100°C. The averaged Q factor in this range was 540. The temperature and thermal resolution of the vanadium oxide resonator are estimated as 1.69 mKWHz and 4.3 nW/√Hz, respectively, which are higher than those of a Si resonator having similar dimensions and under similar conditions.
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U2 - 10.1109/MEMSYS.2016.7421812
DO - 10.1109/MEMSYS.2016.7421812
M3 - Conference contribution
AN - SCOPUS:84970950242
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 1042
EP - 1045
BT - MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016
Y2 - 24 January 2016 through 28 January 2016
ER -