Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells

J. Fujieda; R. Matsutani; J. Hamano; H. Yoshida; K. Arafune; S. Satoh; T. Tachibana; N. Ikeno; H. Lee; A. Ogura; T. Chikyow

doi:10.1109/IMFEDK.2011.5944851

Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells

J. Fujieda, R. Matsutani, J. Hamano, H. Yoshida, K. Arafune, S. Satoh, T. Tachibana, N. Ikeno, H. Lee, A. Ogura, T. Chikyow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A scanning capacitance microscopy (SCM) has been applied to the electrical characterization of passivation films for crystalline Si solar cells. An Y ₂O₃-Al₂O₃ system, which is a binary composition spread oxide film, was used as a fixed-charge-controlled passivation film. The flat-band voltages of the Y₂O₃-Al ₂O₃ system were determined from microscopic C-V curves measured by the SCM. The result was in agreement with that of a conventional C-V method. Additionally, the dV/dC images measured by the SCM were investigated for visualizing the spatial distribution of interface trap density.

Original language	English
Title of host publication	IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai
Pages	74-75
Number of pages	2
DOIs	https://doi.org/10.1109/IMFEDK.2011.5944851
Publication status	Published - 2011 Aug 10
Externally published	Yes
Event	9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011 - Osaka, Japan Duration: 2011 May 19 → 2011 May 20

Publication series

Name	IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai

Conference

Conference	9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011
Country/Territory	Japan
City	Osaka
Period	11/5/19 → 11/5/20

Keywords

SCM
fixed charge
passivation film
solar cells

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IMFEDK.2011.5944851

Cite this

Fujieda, J., Matsutani, R., Hamano, J., Yoshida, H., Arafune, K., Satoh, S., Tachibana, T., Ikeno, N., Lee, H., Ogura, A., & Chikyow, T. (2011). Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells. In IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai (pp. 74-75). [5944851] (IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2011.5944851

Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells. / Fujieda, J.; Matsutani, R.; Hamano, J. et al.
IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai. 2011. p. 74-75 5944851 (IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujieda, J, Matsutani, R, Hamano, J, Yoshida, H, Arafune, K, Satoh, S, Tachibana, T, Ikeno, N, Lee, H, Ogura, A & Chikyow, T 2011, Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells. in IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai., 5944851, IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai, pp. 74-75, 9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011, Osaka, Japan, 11/5/19. https://doi.org/10.1109/IMFEDK.2011.5944851

Fujieda J, Matsutani R, Hamano J, Yoshida H, Arafune K, Satoh S et al. Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells. In IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai. 2011. p. 74-75. 5944851. (IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai). doi: 10.1109/IMFEDK.2011.5944851

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title = "Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells",

abstract = "A scanning capacitance microscopy (SCM) has been applied to the electrical characterization of passivation films for crystalline Si solar cells. An Y 2O3-Al2O3 system, which is a binary composition spread oxide film, was used as a fixed-charge-controlled passivation film. The flat-band voltages of the Y2O3-Al 2O3 system were determined from microscopic C-V curves measured by the SCM. The result was in agreement with that of a conventional C-V method. Additionally, the dV/dC images measured by the SCM were investigated for visualizing the spatial distribution of interface trap density.",

keywords = "SCM, fixed charge, passivation film, solar cells",

author = "J. Fujieda and R. Matsutani and J. Hamano and H. Yoshida and K. Arafune and S. Satoh and T. Tachibana and N. Ikeno and H. Lee and A. Ogura and T. Chikyow",

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doi = "10.1109/IMFEDK.2011.5944851",

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AU - Fujieda, J.

AU - Matsutani, R.

AU - Hamano, J.

AU - Yoshida, H.

AU - Arafune, K.

AU - Satoh, S.

AU - Tachibana, T.

AU - Ikeno, N.

AU - Lee, H.

AU - Ogura, A.

AU - Chikyow, T.

PY - 2011/8/10

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N2 - A scanning capacitance microscopy (SCM) has been applied to the electrical characterization of passivation films for crystalline Si solar cells. An Y 2O3-Al2O3 system, which is a binary composition spread oxide film, was used as a fixed-charge-controlled passivation film. The flat-band voltages of the Y2O3-Al 2O3 system were determined from microscopic C-V curves measured by the SCM. The result was in agreement with that of a conventional C-V method. Additionally, the dV/dC images measured by the SCM were investigated for visualizing the spatial distribution of interface trap density.

AB - A scanning capacitance microscopy (SCM) has been applied to the electrical characterization of passivation films for crystalline Si solar cells. An Y 2O3-Al2O3 system, which is a binary composition spread oxide film, was used as a fixed-charge-controlled passivation film. The flat-band voltages of the Y2O3-Al 2O3 system were determined from microscopic C-V curves measured by the SCM. The result was in agreement with that of a conventional C-V method. Additionally, the dV/dC images measured by the SCM were investigated for visualizing the spatial distribution of interface trap density.

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Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells

Abstract

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