Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

Hirokazu Fukidome; Kei Tanaka; Masamichi Yoshimura; Kazuyuki Ueda; Fang Zhun Guo; Toyohiko Kinoshita; Keisuke Kobayashi

doi:10.1016/j.susc.2007.05.026

Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

Hirokazu Fukidome, Kei Tanaka, Masamichi Yoshimura, Kazuyuki Ueda, Fang Zhun Guo, Toyohiko Kinoshita, Keisuke Kobayashi

RIEC - Computing System Platforms Division

Toyota Technological Institute

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.

Original language	English
Pages (from-to)	4675-4679
Number of pages	5
Journal	Surface Science
Volume	601
Issue number	20 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.susc.2007.05.026
Publication status	Published - 2007 Oct 15

Keywords

Mirror electron microscopy
Oxidation
Photoemission electron microscopy
Silicon
X-ray photoelectron spectroscopy

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10.1016/j.susc.2007.05.026

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@article{b069e2cc2a2445189759ff231b6bf4d8,

title = "Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies",

abstract = "The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.",

keywords = "Mirror electron microscopy, Oxidation, Photoemission electron microscopy, Silicon, X-ray photoelectron spectroscopy",

author = "Hirokazu Fukidome and Kei Tanaka and Masamichi Yoshimura and Kazuyuki Ueda and Guo, {Fang Zhun} and Toyohiko Kinoshita and Keisuke Kobayashi",

note = "Funding Information: This work is partly supported by “High-Tech Research Center” project for private universities: matching fund subsidy from MEXT (Ministry of Education, Culture, Sports, Science and Technology), 2006–2008. The synchrotron radiation experiments were performed at the BL27SU in SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal No. 2005B0651).",

year = "2007",

month = oct,

day = "15",

doi = "10.1016/j.susc.2007.05.026",

language = "English",

volume = "601",

pages = "4675--4679",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "20 SPEC. ISS.",

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TY - JOUR

T1 - Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

AU - Fukidome, Hirokazu

AU - Tanaka, Kei

AU - Yoshimura, Masamichi

AU - Ueda, Kazuyuki

AU - Guo, Fang Zhun

AU - Kinoshita, Toyohiko

AU - Kobayashi, Keisuke

N1 - Funding Information: This work is partly supported by “High-Tech Research Center” project for private universities: matching fund subsidy from MEXT (Ministry of Education, Culture, Sports, Science and Technology), 2006–2008. The synchrotron radiation experiments were performed at the BL27SU in SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal No. 2005B0651).

PY - 2007/10/15

Y1 - 2007/10/15

N2 - The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.

AB - The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.

KW - Mirror electron microscopy

KW - Oxidation

KW - Photoemission electron microscopy

KW - Silicon

KW - X-ray photoelectron spectroscopy

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U2 - 10.1016/j.susc.2007.05.026

DO - 10.1016/j.susc.2007.05.026

M3 - Article

AN - SCOPUS:35148872653

SN - 0039-6028

VL - 601

SP - 4675

EP - 4679

JO - Surface Science

JF - Surface Science

IS - 20 SPEC. ISS.

ER -

Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

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Keywords

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