Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions

Andrew C.C. Yu; X. F. Han; J. Murai; Y. Ando; T. Miyazaki; K. Hiraga

doi:10.1016/S0304-8853(01)00734-X

Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions

Andrew C.C. Yu, X. F. Han, J. Murai, Y. Ando, T. Miyazaki, K. Hiraga

ENG - Applied Physics

Tohoku University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Tunneling magnetoresistance values above 20% and 40% were obtained for as-deposited and annealed tunnel junctions, Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al-oxide/CoFe/NiFe/Ta, respectively. Exchange biasing field increased from 270 to 550 Oe after annealing resulting from sharpening of the IrMn/CoFe interface. dV/dI vs. V curves showed asymmetric profiles, which were due to asymmetry of the CoFe/Al-oxide interfaces and difference in microstructure of the CoFe layers.

Original language	English
Pages (from-to)	130-133
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	240
Issue number	1-3
DOIs	https://doi.org/10.1016/S0304-8853(01)00734-X
Publication status	Published - 2002 Feb

Keywords

Annealing effect
Exchange biasing
Magnetoresistance
Microstructure
Transmission electron microscopy
Tunneling

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10.1016/S0304-8853(01)00734-X

Cite this

@article{1392628461084536adb6e0fb264bbf88,

title = "Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions",

abstract = "Tunneling magnetoresistance values above 20% and 40% were obtained for as-deposited and annealed tunnel junctions, Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al-oxide/CoFe/NiFe/Ta, respectively. Exchange biasing field increased from 270 to 550 Oe after annealing resulting from sharpening of the IrMn/CoFe interface. dV/dI vs. V curves showed asymmetric profiles, which were due to asymmetry of the CoFe/Al-oxide interfaces and difference in microstructure of the CoFe layers.",

keywords = "Annealing effect, Exchange biasing, Magnetoresistance, Microstructure, Transmission electron microscopy, Tunneling",

author = "Yu, {Andrew C.C.} and Han, {X. F.} and J. Murai and Y. Ando and T. Miyazaki and K. Hiraga",

note = "Funding Information: ACCY would like to thank Y. Hayasaka at the High Voltage Electron Microscope Laboratory of Tohoku University for technical assistance. This work is supported by the Japan Society for the Promotion of Science. ",

year = "2002",

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doi = "10.1016/S0304-8853(01)00734-X",

language = "English",

volume = "240",

pages = "130--133",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

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TY - JOUR

T1 - Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions

AU - Yu, Andrew C.C.

AU - Han, X. F.

AU - Murai, J.

AU - Ando, Y.

AU - Miyazaki, T.

AU - Hiraga, K.

N1 - Funding Information: ACCY would like to thank Y. Hayasaka at the High Voltage Electron Microscope Laboratory of Tohoku University for technical assistance. This work is supported by the Japan Society for the Promotion of Science.

PY - 2002/2

Y1 - 2002/2

N2 - Tunneling magnetoresistance values above 20% and 40% were obtained for as-deposited and annealed tunnel junctions, Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al-oxide/CoFe/NiFe/Ta, respectively. Exchange biasing field increased from 270 to 550 Oe after annealing resulting from sharpening of the IrMn/CoFe interface. dV/dI vs. V curves showed asymmetric profiles, which were due to asymmetry of the CoFe/Al-oxide interfaces and difference in microstructure of the CoFe layers.

AB - Tunneling magnetoresistance values above 20% and 40% were obtained for as-deposited and annealed tunnel junctions, Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al-oxide/CoFe/NiFe/Ta, respectively. Exchange biasing field increased from 270 to 550 Oe after annealing resulting from sharpening of the IrMn/CoFe interface. dV/dI vs. V curves showed asymmetric profiles, which were due to asymmetry of the CoFe/Al-oxide interfaces and difference in microstructure of the CoFe layers.

KW - Annealing effect

KW - Exchange biasing

KW - Magnetoresistance

KW - Microstructure

KW - Transmission electron microscopy

KW - Tunneling

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UR - http://www.scopus.com/inward/citedby.url?scp=0036464788&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(01)00734-X

DO - 10.1016/S0304-8853(01)00734-X

M3 - Article

AN - SCOPUS:0036464788

SN - 0304-8853

VL - 240

SP - 130

EP - 133

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

ER -

Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions

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Keywords

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