Microstructural development in cubic silicon carbide during irradiation at elevated temperatures

Y. Katoh, N. Hashimoto, S. Kondo, L. L. Snead, A. Kohyama

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161 Citations (Scopus)


Microstructural development in chemically vapor-deposited (CVD) high-purity beta-SiC during neutron and self-ion irradiation at elevated temperatures was studied. The CVD SiC samples were examined by transmission electron microscopy following neutron irradiation to 4.5-7.7 × 1025 n/m2 (E > 0.1 MeV) at 300 and 800 °C and 5.1 MeV Si2+ ion irradiation up to ∼200 dpa at 600-1400 °C. The evolution of various irradiation-produced defects including black spot defects, dislocation loops, network dislocations, and cavities was characterized as a function of irradiation temperature and fluence. It was demonstrated that the black spot defects and small dislocation loops continue to dominate at relatively low temperatures (<∼800 °C), whereas they grow into Frank faulted loops and finally develop into dislocation networks at a higher temperature (1400 °C). Substantial cavity formation on grain boundaries and stacking faults was confirmed after ion irradiation at 1400 °C. These observations were discussed in relation with the known irradiation phenomena in SiC, such as low temperature swelling and cavity swelling.

Original languageEnglish
Pages (from-to)228-240
Number of pages13
JournalJournal of Nuclear Materials
Issue number1-3
Publication statusPublished - 2006 Jun 1


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