Microstructural evolution in m -plane GaN growth on m -plane SiC

Qian Sun; Soon Yong Kwon; Zaiyuan Ren; Jung Han; Takeyoshi Onuma; Shigefusa F. Chichibu; Shaoping Wang

doi:10.1063/1.2841671

Microstructural evolution in m -plane GaN growth on m -plane SiC

Qian Sun, Soon Yong Kwon, Zaiyuan Ren, Jung Han, Takeyoshi Onuma, Shigefusa F. Chichibu, Shaoping Wang

IMRAM - Division of Measurements

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34 Citations (Scopus)

Abstract

This letter presents a study on the nucleation and microstructural evolution of m -plane GaN epilayers on m -plane SiC substrates using high-temperature AlN buffer layers. Controlled growth interruptions were carried out to render snapshots of heteroepitaxial dynamics. It was discovered that island coalescence results in an inhomogeneous mosaic tilt along the c -axis. Mesoscopic study of nucleation evolution helps elucidate the origin of commonly observed surface undulation and striation, which is attributed to concave growth due to the coalescence of trapezoidal islands upon contact. A model correlating microstructural defects with optical properties is proposed to explain the observed pattern in spatially resolved cathodoluminescence mapping.

Original language	English
Article number	051112
Journal	Applied Physics Letters
Volume	92
Issue number	5
DOIs	https://doi.org/10.1063/1.2841671
Publication status	Published - 2008

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abstract = "This letter presents a study on the nucleation and microstructural evolution of m -plane GaN epilayers on m -plane SiC substrates using high-temperature AlN buffer layers. Controlled growth interruptions were carried out to render snapshots of heteroepitaxial dynamics. It was discovered that island coalescence results in an inhomogeneous mosaic tilt along the c -axis. Mesoscopic study of nucleation evolution helps elucidate the origin of commonly observed surface undulation and striation, which is attributed to concave growth due to the coalescence of trapezoidal islands upon contact. A model correlating microstructural defects with optical properties is proposed to explain the observed pattern in spatially resolved cathodoluminescence mapping.",

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AU - Sun, Qian

AU - Kwon, Soon Yong

AU - Ren, Zaiyuan

AU - Han, Jung

AU - Onuma, Takeyoshi

AU - Chichibu, Shigefusa F.

AU - Wang, Shaoping

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N2 - This letter presents a study on the nucleation and microstructural evolution of m -plane GaN epilayers on m -plane SiC substrates using high-temperature AlN buffer layers. Controlled growth interruptions were carried out to render snapshots of heteroepitaxial dynamics. It was discovered that island coalescence results in an inhomogeneous mosaic tilt along the c -axis. Mesoscopic study of nucleation evolution helps elucidate the origin of commonly observed surface undulation and striation, which is attributed to concave growth due to the coalescence of trapezoidal islands upon contact. A model correlating microstructural defects with optical properties is proposed to explain the observed pattern in spatially resolved cathodoluminescence mapping.

AB - This letter presents a study on the nucleation and microstructural evolution of m -plane GaN epilayers on m -plane SiC substrates using high-temperature AlN buffer layers. Controlled growth interruptions were carried out to render snapshots of heteroepitaxial dynamics. It was discovered that island coalescence results in an inhomogeneous mosaic tilt along the c -axis. Mesoscopic study of nucleation evolution helps elucidate the origin of commonly observed surface undulation and striation, which is attributed to concave growth due to the coalescence of trapezoidal islands upon contact. A model correlating microstructural defects with optical properties is proposed to explain the observed pattern in spatially resolved cathodoluminescence mapping.

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Microstructural evolution in m -plane GaN growth on m -plane SiC

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