Microstructure and dielectric properties of barium titanate film prepared by MOCVD

Tetsuro Tohma; Hiroshi Masumoto; Takashi Goto

doi:10.2320/matertrans.43.2880

Microstructure and dielectric properties of barium titanate film prepared by MOCVD

Tetsuro Tohma, Hiroshi Masumoto, Takashi Goto

FRIS - Advanced Interdisciplinary Research Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Barium titanate (BaTiO₃) films were prepared on (100)Pt/(100)MgO substrates by metal-organic chemical vapor deposition (MOCVD). The effects of deposition temperature (T_dep) and O₂ partial pressure (P_O2) on the microstructure and dielectric properties of the films were investigated. The BaTiO₃ films prepared at T_dep 873 K showed a randomly orientated granular structure, while those prepared at T_dep = 973 K showed a significant (001) orientation with a columnar structure. The grain size was strongly affected by P_O2 and showed the maximum at P_O2 = 66 to 93 Pa. The dielectric constant increased from 93 to 640 with increasing grain size from 20 to 130 nm, showing a broad peak at 350 to 380 K.

Original language	English
Pages (from-to)	2880-2884
Number of pages	5
Journal	Materials Transactions
Volume	43
Issue number	11
DOIs	https://doi.org/10.2320/matertrans.43.2880
Publication status	Published - 2002 Nov

Keywords

Barium titanate
Dielectric constant
Film
Grain size
Metal-organic chemical vapor deposition
Microstructure

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10.2320/matertrans.43.2880

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abstract = "Barium titanate (BaTiO3) films were prepared on (100)Pt/(100)MgO substrates by metal-organic chemical vapor deposition (MOCVD). The effects of deposition temperature (Tdep) and O2 partial pressure (PO2) on the microstructure and dielectric properties of the films were investigated. The BaTiO3 films prepared at Tdep 873 K showed a randomly orientated granular structure, while those prepared at Tdep = 973 K showed a significant (001) orientation with a columnar structure. The grain size was strongly affected by PO2 and showed the maximum at PO2 = 66 to 93 Pa. The dielectric constant increased from 93 to 640 with increasing grain size from 20 to 130 nm, showing a broad peak at 350 to 380 K.",

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T1 - Microstructure and dielectric properties of barium titanate film prepared by MOCVD

AU - Tohma, Tetsuro

AU - Masumoto, Hiroshi

AU - Goto, Takashi

PY - 2002/11

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N2 - Barium titanate (BaTiO3) films were prepared on (100)Pt/(100)MgO substrates by metal-organic chemical vapor deposition (MOCVD). The effects of deposition temperature (Tdep) and O2 partial pressure (PO2) on the microstructure and dielectric properties of the films were investigated. The BaTiO3 films prepared at Tdep 873 K showed a randomly orientated granular structure, while those prepared at Tdep = 973 K showed a significant (001) orientation with a columnar structure. The grain size was strongly affected by PO2 and showed the maximum at PO2 = 66 to 93 Pa. The dielectric constant increased from 93 to 640 with increasing grain size from 20 to 130 nm, showing a broad peak at 350 to 380 K.

AB - Barium titanate (BaTiO3) films were prepared on (100)Pt/(100)MgO substrates by metal-organic chemical vapor deposition (MOCVD). The effects of deposition temperature (Tdep) and O2 partial pressure (PO2) on the microstructure and dielectric properties of the films were investigated. The BaTiO3 films prepared at Tdep 873 K showed a randomly orientated granular structure, while those prepared at Tdep = 973 K showed a significant (001) orientation with a columnar structure. The grain size was strongly affected by PO2 and showed the maximum at PO2 = 66 to 93 Pa. The dielectric constant increased from 93 to 640 with increasing grain size from 20 to 130 nm, showing a broad peak at 350 to 380 K.

KW - Barium titanate

KW - Dielectric constant

KW - Film

KW - Grain size

KW - Metal-organic chemical vapor deposition

KW - Microstructure

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Microstructure and dielectric properties of barium titanate film prepared by MOCVD

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Keywords

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