Microstructure and electrical conductivity of SrRuO3 thin films prepared by laser ablation

Akihiko Ito; Hiroshi Masumoto; Takashi Goto

doi:10.2320/matertrans.47.2808

Microstructure and electrical conductivity of SrRuO₃ thin films prepared by laser ablation

Akihiko Ito, Hiroshi Masumoto, Takashi Goto

FRIS - Advanced Interdisciplinary Research Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

SrRuO₃ (SRO) thin films were prepared by laser ablation, and the effects of deposition conditions on the microstructure and electrical conductivity of these films were investigated by changing the substrate temperature (T_sub) and deposition atmosphere. The SRO thin films deposited on quartz substrates in a high vacuum (P = 10^-6 Pa) and an oxygen partial pressure (P_O2) of 0.13 Pa were amorphous, independent of T_sub. Pseudo-cubic SRO thin films were obtained at P_O2 = 13 Pa and T_sub > 773 K. The Sr to Ru ratio increased with increasing T_sub, and free Ru was contained in SRO films prepared at P = 10^-6 Pa. The crystal grain coarsened with increasing T _sub and P_O2. The electrical conductivity (σ) of SRO thin films increased with increasing T_sub and P_O2, and the highest σ was obtained at T_sub = 973 K and P_O2 = 13 Pa. The σ of SRO films mainly changed with the Sr/Ru ratio and the surface morphology. The change of σ associated with the magnetic phase transition was observed at 163 K.

Original language	English
Pages (from-to)	2808-2814
Number of pages	7
Journal	Materials Transactions
Volume	47
Issue number	11
DOIs	https://doi.org/10.2320/matertrans.47.2808
Publication status	Published - 2006 Nov

Keywords

Conductive oxide
Electrical conductivity
Laser ablation
Microstructure
Strontium ruthenate
Thin films

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title = "Microstructure and electrical conductivity of SrRuO3 thin films prepared by laser ablation",

abstract = "SrRuO3 (SRO) thin films were prepared by laser ablation, and the effects of deposition conditions on the microstructure and electrical conductivity of these films were investigated by changing the substrate temperature (Tsub) and deposition atmosphere. The SRO thin films deposited on quartz substrates in a high vacuum (P = 10-6 Pa) and an oxygen partial pressure (PO2) of 0.13 Pa were amorphous, independent of Tsub. Pseudo-cubic SRO thin films were obtained at PO2 = 13 Pa and Tsub > 773 K. The Sr to Ru ratio increased with increasing Tsub, and free Ru was contained in SRO films prepared at P = 10-6 Pa. The crystal grain coarsened with increasing T sub and PO2. The electrical conductivity (σ) of SRO thin films increased with increasing Tsub and PO2, and the highest σ was obtained at Tsub = 973 K and PO2 = 13 Pa. The σ of SRO films mainly changed with the Sr/Ru ratio and the surface morphology. The change of σ associated with the magnetic phase transition was observed at 163 K.",

keywords = "Conductive oxide, Electrical conductivity, Laser ablation, Microstructure, Strontium ruthenate, Thin films",

author = "Akihiko Ito and Hiroshi Masumoto and Takashi Goto",

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AU - Ito, Akihiko

AU - Masumoto, Hiroshi

AU - Goto, Takashi

PY - 2006/11

Y1 - 2006/11

N2 - SrRuO3 (SRO) thin films were prepared by laser ablation, and the effects of deposition conditions on the microstructure and electrical conductivity of these films were investigated by changing the substrate temperature (Tsub) and deposition atmosphere. The SRO thin films deposited on quartz substrates in a high vacuum (P = 10-6 Pa) and an oxygen partial pressure (PO2) of 0.13 Pa were amorphous, independent of Tsub. Pseudo-cubic SRO thin films were obtained at PO2 = 13 Pa and Tsub > 773 K. The Sr to Ru ratio increased with increasing Tsub, and free Ru was contained in SRO films prepared at P = 10-6 Pa. The crystal grain coarsened with increasing T sub and PO2. The electrical conductivity (σ) of SRO thin films increased with increasing Tsub and PO2, and the highest σ was obtained at Tsub = 973 K and PO2 = 13 Pa. The σ of SRO films mainly changed with the Sr/Ru ratio and the surface morphology. The change of σ associated with the magnetic phase transition was observed at 163 K.

AB - SrRuO3 (SRO) thin films were prepared by laser ablation, and the effects of deposition conditions on the microstructure and electrical conductivity of these films were investigated by changing the substrate temperature (Tsub) and deposition atmosphere. The SRO thin films deposited on quartz substrates in a high vacuum (P = 10-6 Pa) and an oxygen partial pressure (PO2) of 0.13 Pa were amorphous, independent of Tsub. Pseudo-cubic SRO thin films were obtained at PO2 = 13 Pa and Tsub > 773 K. The Sr to Ru ratio increased with increasing Tsub, and free Ru was contained in SRO films prepared at P = 10-6 Pa. The crystal grain coarsened with increasing T sub and PO2. The electrical conductivity (σ) of SRO thin films increased with increasing Tsub and PO2, and the highest σ was obtained at Tsub = 973 K and PO2 = 13 Pa. The σ of SRO films mainly changed with the Sr/Ru ratio and the surface morphology. The change of σ associated with the magnetic phase transition was observed at 163 K.

KW - Conductive oxide

KW - Electrical conductivity

KW - Laser ablation

KW - Microstructure

KW - Strontium ruthenate

KW - Thin films

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Microstructure and electrical conductivity of SrRuO₃ thin films prepared by laser ablation

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