Abstract
Thin films of Pb(Zr0.52 Ti0.48)O3 (PZT) were prepared by excimer laser ablation on a Pt/Ti/SiO2/Si substrate and were crystallized by subsequent annealing at 750°C for 90 min. Crystalline phases in the PZT films were investigated by X-ray diffraction analysis. The microstructure and composition of the films were studied by transmission electron microscopy and energy dispersive X-ray spectroscopy, respectively. It is found that the films consist almost entirely of the perovskite phase, but a thin layer of the pyrochlore phase exists at the surface of the films. Electrical properties of these films were evaluated by measuring P-E hysteresis loops and dielectric constants. The remanent polarization and the coercive field of the films were 23.9μC/cm2 and 60.5 kV/cm, respectively, while the dielectric constant and loss values measured at 1 kHz were approximately 950 and 0.04, respectively. The effect of the microstructure on the electrical properties of the PZT thin films is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 5523-5527 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 40 |
| Issue number | 9 B |
| DOIs | |
| Publication status | Published - 2001 Sept |
| Externally published | Yes |
Keywords
- Ceramics
- Dielectric properties
- Ferroelectric properties
- Laser ablation
- Lead zirconate titanate (PZT)
- Microstructure
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)