Microstructures of Si multicrystals and their impact on minority carrier diffusion length

H. Y. Wang, N. Usami, K. Fujiwara, K. Kutsukake, K. Nakajima

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


We carried out a systematic investigation of microstructures in a particular zone of Si multicrystals which shows a strong local variation in minority carrier diffusion length (MCDL). It was found that three typical regions with distinct microstructures correspond to the microscopic origins of the local MCDL difference. The region with perfect twin structure (Σ3 boundaries) has a high MCDL, while the regions with either high-angle grain boundaries (Σ9 and Σ27 boundaries) or sub-grain boundaries (high density dislocation) exhibit lower minority carrier diffusion. The relationships between the microstructures and the corresponding MCDLs are briefly discussed. This study has implications for developing improved Si multicrystals with appropriate microstructure for application in solar cells.

Original languageEnglish
Pages (from-to)3268-3276
Number of pages9
JournalActa Materialia
Issue number11
Publication statusPublished - 2009 Jun


  • Grain boundary
  • Microstructure
  • Si multicrystals
  • Solar cells


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