TY - JOUR
T1 - Microwave Annealing Technologies for Variability Reduction of Nanodevices
T2 - A Review of Their Impact on FinFETs
AU - Endo, Kazuhiko
AU - Lee, Yao Jen
N1 - Publisher Copyright:
© 2007-2011 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - The rapid reduction of feature size in CMOS devices causes their variability to increase, thus reducing the circuit yield [1]-[3]. In particular, the static random access memory (SRAM) cell uses the smallest transistor to achieve high-density integration, the effect of which is a lower yield [4]. The reduction of variability is, therefore, becoming the most important concern for CMOS devices. In this article, we review the effectiveness of introducing multigate devices and microwave annealing (MWA) for performance enhancement.
AB - The rapid reduction of feature size in CMOS devices causes their variability to increase, thus reducing the circuit yield [1]-[3]. In particular, the static random access memory (SRAM) cell uses the smallest transistor to achieve high-density integration, the effect of which is a lower yield [4]. The reduction of variability is, therefore, becoming the most important concern for CMOS devices. In this article, we review the effectiveness of introducing multigate devices and microwave annealing (MWA) for performance enhancement.
UR - http://www.scopus.com/inward/record.url?scp=85073146431&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073146431&partnerID=8YFLogxK
U2 - 10.1109/MNANO.2019.2941029
DO - 10.1109/MNANO.2019.2941029
M3 - Review article
AN - SCOPUS:85073146431
SN - 1932-4510
VL - 13
SP - 34
EP - 38
JO - IEEE Nanotechnology Magazine
JF - IEEE Nanotechnology Magazine
IS - 6
M1 - 8862822
ER -