Lowering process temperature of gate oxide formation process is essential to realize ultra-high integration devices. We have succeeded in substantially reducing a process temperature of silicon oxide film formation on (100) and (111) silicon substrate by Kr/O2 mixed microwave excited high-density plasma which have high-density and low electron temperature. The silicon oxide films exhibit high growth rate, high dielectric strength, charge-to-breakdown and low interface trap density enough to thermally grown silicon oxide.
|Number of pages||8|
|Journal||Shinku/Journal of the Vacuum Society of Japan|
|Publication status||Published - 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering