Abstract
In this study, nonconductor (PZT), semiconductor (Si) and conductor (Pt/Ti) whose permit-tivity and permeability are distinctive are prepared into various multilayered structures for explor-ing the heating behavior of microwave (2.45Hz) in a single-mode cavity. The heating efficiency of the semiconductor and conductor was much higher at the maximum of H field than that of E field. At the H maximum, the Si layer was useful to generate high temperature and the Pt/Ti accelerated the heating rate. At the E maximum, the Si layer was also in favor of obtaining high temperature, but the Pt/Ti layer partially suppressed the microwave heating. The effect of PZT on the heating processing was not obviously observed at the maximum of both H and E fields.
| Original language | English |
|---|---|
| Pages (from-to) | 43123-43126 |
| Number of pages | 4 |
| Journal | Journal of Microwave Power and Electromagnetic Energy |
| Volume | 43 |
| Issue number | 1 |
| Publication status | Published - 2009 Dec 1 |
Keywords
- Ferroelectric thin films
- Heating mechanism
- Microwave heating
- Multilayered structure
- Single-mode cavity
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Metals and Alloys
- Electrical and Electronic Engineering