Abstract
A microwave photoconductance technique for the nondestructive characterization of the electrical uniformity of semi-insulating GaAs substrates is presented, and applied to Cr-doped HB and undoped LEC substrates. A theoretical and experimental analysis shows that photoconductance is related to the effective lifetime of photo-generated electrons in both types of substrates. Photoconductance variation in Cr-doped substrates is less pronounced, and is related to Cr acceptor concentration. The photoconductance variation in undoped LEC substrates is more pronounced, with a U, M, or W-shaped distribution, and reflects fluctuations in the concentration of residual acceptors such as carbon.
| Original language | English |
|---|---|
| Pages | 41-44 |
| Number of pages | 4 |
| Publication status | Published - 1984 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering