TY - GEN
T1 - Mid-infrared InAs-based quantum cascade lasers
AU - Ohtani, K.
AU - Ohno, H.
PY - 2005
Y1 - 2005
N2 - We report our recent experimental results on mid-infrared InAs-based quantum cascade lasers grown on n-InAs(100) substrates by molecular beam epitaxy. An InAs double plasmon waveguide is used for the optical confinement. The completed QCLs operate at 8-14 m wavelength range. Observed minimum threshold current density at 80 K by using InAs/AlGaSb superlattice active layers is 0.42kA/cm2, which is the lowest threshold current density in the mid-infrared region. The observed maximum operation temperature is 270K.
AB - We report our recent experimental results on mid-infrared InAs-based quantum cascade lasers grown on n-InAs(100) substrates by molecular beam epitaxy. An InAs double plasmon waveguide is used for the optical confinement. The completed QCLs operate at 8-14 m wavelength range. Observed minimum threshold current density at 80 K by using InAs/AlGaSb superlattice active layers is 0.42kA/cm2, which is the lowest threshold current density in the mid-infrared region. The observed maximum operation temperature is 270K.
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U2 - 10.1109/ICIPRM.2005.1517424
DO - 10.1109/ICIPRM.2005.1517424
M3 - Conference contribution
AN - SCOPUS:33747422481
SN - 0780388917
SN - 9780780388918
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 78
EP - 81
BT - 2005 International Conference on Indium Phosphide and Related Materials
T2 - 2005 International Conference on Indium Phosphide and Related Materials
Y2 - 8 May 2005 through 12 May 2005
ER -