Miniaturized high-frequency carrier-type thin-film magnetic field sensor with high sensitivity

H. Kikuchi; N. Ajiro; M. Yamaguchi; K. I. Arai; M. Takezawa

doi:10.1109/20.951047

Miniaturized high-frequency carrier-type thin-film magnetic field sensor with high sensitivity

H. Kikuchi, N. Ajiro, M. Yamaguchi, K. I. Arai, M. Takezawa

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

This paper discusses miniaturization and the sensitivity of a high-frequency carrier-type thin-film magnetic field sensor. We examined a lift-off process as fabrication process instead of ion-milling process to obtain an even edge and higher sensitivity when the sensor is miniaturized. Then, we used a thin conductive interlayer to control the domain structure and demonstrated high sensitivity. The sensor dimensions were miniaturized to 3 μm wide, 1 μm thick and 1 mm long. In this instance, an impedance change of 3 Ω against external dc field was obtained. Moreover, a gain of 150 kΩ/T was achieved.

Original language	English
Pages (from-to)	2042-2044
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	37
Issue number	4 I
DOIs	https://doi.org/10.1109/20.951047
Publication status	Published - 2001 Jul
Event	8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States Duration: 2001 Jan 7 → 2001 Jan 11

Keywords

Domain structure
High-frequency carrier-type thin-film magnetic field sensor
Laminated sensor
Lift-off

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10.1109/20.951047

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title = "Miniaturized high-frequency carrier-type thin-film magnetic field sensor with high sensitivity",

abstract = "This paper discusses miniaturization and the sensitivity of a high-frequency carrier-type thin-film magnetic field sensor. We examined a lift-off process as fabrication process instead of ion-milling process to obtain an even edge and higher sensitivity when the sensor is miniaturized. Then, we used a thin conductive interlayer to control the domain structure and demonstrated high sensitivity. The sensor dimensions were miniaturized to 3 μm wide, 1 μm thick and 1 mm long. In this instance, an impedance change of 3 Ω against external dc field was obtained. Moreover, a gain of 150 kΩ/T was achieved.",

keywords = "Domain structure, High-frequency carrier-type thin-film magnetic field sensor, Laminated sensor, Lift-off",

author = "H. Kikuchi and N. Ajiro and M. Yamaguchi and Arai, {K. I.} and M. Takezawa",

note = "Funding Information: This work was supported in part by the Program for Promotion of Fundamental Studies in Health Sciences of the Organization for Drug ADR Relief, R&D Promotion and Product Review of Japan, Joint-Research Project for Regional Intensive of Miyagi prefecture Japan and Research project on Electronic System Integration Technology, Association of Super-Advanced Electronics Technologies (ASET).; 8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) ; Conference date: 07-01-2001 Through 11-01-2001",

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AU - Kikuchi, H.

AU - Ajiro, N.

AU - Yamaguchi, M.

AU - Arai, K. I.

AU - Takezawa, M.

N1 - Funding Information: This work was supported in part by the Program for Promotion of Fundamental Studies in Health Sciences of the Organization for Drug ADR Relief, R&D Promotion and Product Review of Japan, Joint-Research Project for Regional Intensive of Miyagi prefecture Japan and Research project on Electronic System Integration Technology, Association of Super-Advanced Electronics Technologies (ASET).

PY - 2001/7

Y1 - 2001/7

N2 - This paper discusses miniaturization and the sensitivity of a high-frequency carrier-type thin-film magnetic field sensor. We examined a lift-off process as fabrication process instead of ion-milling process to obtain an even edge and higher sensitivity when the sensor is miniaturized. Then, we used a thin conductive interlayer to control the domain structure and demonstrated high sensitivity. The sensor dimensions were miniaturized to 3 μm wide, 1 μm thick and 1 mm long. In this instance, an impedance change of 3 Ω against external dc field was obtained. Moreover, a gain of 150 kΩ/T was achieved.

AB - This paper discusses miniaturization and the sensitivity of a high-frequency carrier-type thin-film magnetic field sensor. We examined a lift-off process as fabrication process instead of ion-milling process to obtain an even edge and higher sensitivity when the sensor is miniaturized. Then, we used a thin conductive interlayer to control the domain structure and demonstrated high sensitivity. The sensor dimensions were miniaturized to 3 μm wide, 1 μm thick and 1 mm long. In this instance, an impedance change of 3 Ω against external dc field was obtained. Moreover, a gain of 150 kΩ/T was achieved.

KW - Domain structure

KW - High-frequency carrier-type thin-film magnetic field sensor

KW - Laminated sensor

KW - Lift-off

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

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Y2 - 7 January 2001 through 11 January 2001

ER -

Miniaturized high-frequency carrier-type thin-film magnetic field sensor with high sensitivity

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Keywords

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