Misoriented grains with a preferential orientation in a-plane oriented GaN layers

Yuki Tokumoto, Hyun Jae Lee, Yutaka Ohno, Takafumi Yao, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The microstructure of nonpolar GaN layers grown on r-plane sapphire substrates was investigated using transmission electron microscopy (TEM). The structure of the GaN layers was predominantly a-plane oriented single-crystal. In the a-plane oriented layers, misoriented grains about 200 nm in size with a preferential orientation were detected by selecting a proper observation direction. The preferential orientation relationship between the a-plane oriented layers and the misoriented grains was analyzed using atomic structure models, and two possible formation mechanisms of the misoriented grains were suggested.

Original languageEnglish
Pages (from-to)80-83
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2011 Nov 1


  • A1. Characterization
  • A1. Defects
  • A3. Hydride vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting IIIV materials


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