TY - JOUR
T1 - Mixed Ge-Si dimer growth at the Ge/Si(001)- (2×1) surface
AU - Patthey, L.
AU - Bullock, E. L.
AU - Abukawa, T.
AU - Kono, S.
AU - Johansson, L. S.O.
PY - 1995
Y1 - 1995
N2 - The submonolayer growth of Ge on single domain Si(001)- (2×1) has been studied using high resolution photoemission by monitoring the Ge 3d and Si 2p core levels as functions of coverage, electron emission angle, and annealing temperature. It is shown that Ge initially grows as asymmetric mixed Ge-Si dimers with Ge occupying the up atom and Si occupying the down atom sites. Although this growth mode is predominant up to 0.8 monolayer coverage, pure Ge-Ge dimers do occur as well as Ge substitution of second and perhaps deeper layer Si. This interdiffusion is enhanced upon annealing to 600°C.
AB - The submonolayer growth of Ge on single domain Si(001)- (2×1) has been studied using high resolution photoemission by monitoring the Ge 3d and Si 2p core levels as functions of coverage, electron emission angle, and annealing temperature. It is shown that Ge initially grows as asymmetric mixed Ge-Si dimers with Ge occupying the up atom and Si occupying the down atom sites. Although this growth mode is predominant up to 0.8 monolayer coverage, pure Ge-Ge dimers do occur as well as Ge substitution of second and perhaps deeper layer Si. This interdiffusion is enhanced upon annealing to 600°C.
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U2 - 10.1103/PhysRevLett.75.2538
DO - 10.1103/PhysRevLett.75.2538
M3 - Article
AN - SCOPUS:3943055801
SN - 0031-9007
VL - 75
SP - 2538
EP - 2541
JO - Physical Review Letters
JF - Physical Review Letters
IS - 13
ER -