TY - JOUR
T1 - Mn-based III-V diluted magnetic (semimagnetic) semiconductors
AU - Ohno, H.
PY - 1995
Y1 - 1995
N2 - Growth and properties of a new class of diluted magnetic (semimagnetic) semiconductor (DMS's) based on a III-V compound are reviewed. Epitaxial films of (In,Mn)As, the new III-V based DMS, were made possible by low temperature molecular beam epitaxial growth. The magnetic properties of the epitaxial layers were revealed by the use of the anomalous Hall effect with the assistance from SQUID measurements. The epitaxial films showed antiferromagnetic, partial ferromagnetic, and superparamagnetic behavior depending on the Mn-Mn interaction, which was modified by the presence of carriers. Magnetic localization of carriers were also observed.
AB - Growth and properties of a new class of diluted magnetic (semimagnetic) semiconductor (DMS's) based on a III-V compound are reviewed. Epitaxial films of (In,Mn)As, the new III-V based DMS, were made possible by low temperature molecular beam epitaxial growth. The magnetic properties of the epitaxial layers were revealed by the use of the anomalous Hall effect with the assistance from SQUID measurements. The epitaxial films showed antiferromagnetic, partial ferromagnetic, and superparamagnetic behavior depending on the Mn-Mn interaction, which was modified by the presence of carriers. Magnetic localization of carriers were also observed.
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U2 - 10.4028/www.scientific.net/msf.182-184.443
DO - 10.4028/www.scientific.net/msf.182-184.443
M3 - Conference article
AN - SCOPUS:0029235325
SN - 0255-5476
VL - 182-184
SP - 443
EP - 450
JO - Materials Science Forum
JF - Materials Science Forum
T2 - Proceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors
Y2 - 26 September 1994 through 28 September 1994
ER -