Mn-based III-V diluted magnetic (semimagnetic) semiconductors

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Growth and properties of a new class of diluted magnetic (semimagnetic) semiconductor (DMS's) based on a III-V compound are reviewed. Epitaxial films of (In,Mn)As, the new III-V based DMS, were made possible by low temperature molecular beam epitaxial growth. The magnetic properties of the epitaxial layers were revealed by the use of the anomalous Hall effect with the assistance from SQUID measurements. The epitaxial films showed antiferromagnetic, partial ferromagnetic, and superparamagnetic behavior depending on the Mn-Mn interaction, which was modified by the presence of carriers. Magnetic localization of carriers were also observed.

Original languageEnglish
Pages (from-to)443-450
Number of pages8
JournalMaterials Science Forum
Publication statusPublished - 1995
EventProceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors - Linz, Austria
Duration: 1994 Sept 261994 Sept 28


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