Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for sram reliability

Hamed Dadgour; Kazuhiko Endo; De Vivek; Kaustav Banerjee

doi:10.1109/IEDM.2008.4796792

Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for sram reliability

Hamed Dadgour, Kazuhiko Endo, De Vivek, Kaustav Banerjee

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

96 Citations (Scopus)

Abstract

This work introduces an analytical approach to model the random threshold voltage (V _th) fluctuations in emerging high-k/metal-gate devices caused by the dependency of metal work-function (WF) on its grain orientations. It is shown that such variations can be modeled by a multi-nomial distribution where the key parameters of its probability distribution function (pdf) can be calculated in terms of the physical dimensions of the devices and properties of the materials. It is highlighted for the first time that such variations can have significant implications for the performance and reliability of minimum sized circuits such as SRAM cells.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796792
Publication status	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

Access to Document

10.1109/IEDM.2008.4796792

Cite this

@inproceedings{74d90ed1babe403a9bf95252f622eb87,

title = "Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for sram reliability",

abstract = "This work introduces an analytical approach to model the random threshold voltage (V th) fluctuations in emerging high-k/metal-gate devices caused by the dependency of metal work-function (WF) on its grain orientations. It is shown that such variations can be modeled by a multi-nomial distribution where the key parameters of its probability distribution function (pdf) can be calculated in terms of the physical dimensions of the devices and properties of the materials. It is highlighted for the first time that such variations can have significant implications for the performance and reliability of minimum sized circuits such as SRAM cells.",

author = "Hamed Dadgour and Kazuhiko Endo and De Vivek and Kaustav Banerjee",

year = "2008",

doi = "10.1109/IEDM.2008.4796792",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Dadgour, H, Endo, K, Vivek, D & Banerjee, K 2008, Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for sram reliability. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796792, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796792

Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for sram reliability. / Dadgour, Hamed; Endo, Kazuhiko; Vivek, De et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796792 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for sram reliability

AU - Dadgour, Hamed

AU - Endo, Kazuhiko

AU - Vivek, De

AU - Banerjee, Kaustav

PY - 2008

Y1 - 2008

N2 - This work introduces an analytical approach to model the random threshold voltage (V th) fluctuations in emerging high-k/metal-gate devices caused by the dependency of metal work-function (WF) on its grain orientations. It is shown that such variations can be modeled by a multi-nomial distribution where the key parameters of its probability distribution function (pdf) can be calculated in terms of the physical dimensions of the devices and properties of the materials. It is highlighted for the first time that such variations can have significant implications for the performance and reliability of minimum sized circuits such as SRAM cells.

AB - This work introduces an analytical approach to model the random threshold voltage (V th) fluctuations in emerging high-k/metal-gate devices caused by the dependency of metal work-function (WF) on its grain orientations. It is shown that such variations can be modeled by a multi-nomial distribution where the key parameters of its probability distribution function (pdf) can be calculated in terms of the physical dimensions of the devices and properties of the materials. It is highlighted for the first time that such variations can have significant implications for the performance and reliability of minimum sized circuits such as SRAM cells.

UR - http://www.scopus.com/inward/record.url?scp=78650760269&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650760269&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2008.4796792

DO - 10.1109/IEDM.2008.4796792

M3 - Conference contribution

AN - SCOPUS:78650760269

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for sram reliability

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this