Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for sram reliability

Hamed Dadgour, Kazuhiko Endo, De Vivek, Kaustav Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

97 Citations (Scopus)

Abstract

This work introduces an analytical approach to model the random threshold voltage (V th) fluctuations in emerging high-k/metal-gate devices caused by the dependency of metal work-function (WF) on its grain orientations. It is shown that such variations can be modeled by a multi-nomial distribution where the key parameters of its probability distribution function (pdf) can be calculated in terms of the physical dimensions of the devices and properties of the materials. It is highlighted for the first time that such variations can have significant implications for the performance and reliability of minimum sized circuits such as SRAM cells.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/TerritoryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

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