Modeling and analysis of self-heating in FinFET devices for improved circuit and EOS/ESD performance

Seshadri Kolluri, Kazuhiko Endo, Eiichi Suzuki, Kaustav Banerjee

Research output: Contribution to journalConference articlepeer-review

41 Citations (Scopus)


A rigorous analytical thermal model has been formulated for the analysis of self-heating effects in FinFETs, under both steady-state and transient stress conditions. 3-D self-consistent electrothermal simulations, calibrated with experimentally measured electrical characteristics, were used to understand the nature of self-heating in FinFETs and calibrate the proposed model. The accuracy of the model has been demonstrated for a wide range of multi-fin devices, by comparing against finite element simulations. The model has been applied to carry out a detailed sensitivity analysis of self-heating with respect to various FinFET parameters and structures which are critical for improving circuit performance and EOS/ESD reliability. The transient model has been used to estimate the thermal time constants of these devices and predict the sensitivity of power-to-failure to various device parameters, for both long and short pulse ESD situations.

Original languageEnglish
Article number4418895
Pages (from-to)177-180
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 2007 Dec 102007 Dec 12


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