Modeling of drain current mismatch in organic thin-film transistors

Deyu Tu, Kazuo Takimiya, Ute Zschieschang, Hagen Klauk, Robert Forchheimer

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


In this paper, we present a consistent model to analyze the drain current mismatch of organic thin-film transistors. The model takes charge fluctuations and edge effects into account, to predict the fluctuations of drain currents. A Poisson distribution for the number of charge carriers is assumed to represent the random distribution of charge carriers in the channel. The edge effects due to geometric variations in fabrication processes are interpreted in terms of the fluctuations of channel length and width. The simulation results are corroborated by experimental results taken from over 80 organic transistors on a flexible plastic substrate.

Original languageEnglish
Article number7080874
Pages (from-to)559-563
Number of pages5
JournalIEEE/OSA Journal of Display Technology
Issue number6
Publication statusPublished - 2015 Jun 1
Externally publishedYes


  • Current fluctuation
  • mismatch
  • modeling
  • organic thin-film transistors (OTFTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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