TY - JOUR
T1 - Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth
AU - Kutsukake, Kentaro
AU - Ise, Hideaki
AU - Tokumoto, Yuki
AU - Ohno, Yutaka
AU - Nakajima, Kazuo
AU - Yonenaga, Ichiro
N1 - Funding Information:
This work was partially supported by Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan (no. 23760004 ), the New Energy and Industrial Technology Development Organization (NEDO) (no. P07015 ), and Nippon Sheet Glass Foundation for Materials Science and Engineering (NSG Foundation) .
PY - 2012/8/1
Y1 - 2012/8/1
N2 - We propose a simple numerical model for incorporation of oxygen and carbon impurities into multicrystalline Si during one-directional crystal growth in comparison with experimental results. The model includes parameters that are oxygen and carbon concentrations in the melt in the beginning of the growth, carbon flux form the atmosphere, oxygen fluxes from the crucible and to the atmosphere. Variation of oxygen and carbon concentrations in multicrystalline Si ingots with a diameter of 30 cm and a height of 7.5 cm solidified one-directionally was measured by infra red absorption spectroscopy at room temperature. By fitting the numerical results on the experimental results, the parameters were evaluated. In the modeling we found fruitful suggestions for suppressing and controlling the oxygen and carbon concentrations in multicrystalline Si for solar cells.
AB - We propose a simple numerical model for incorporation of oxygen and carbon impurities into multicrystalline Si during one-directional crystal growth in comparison with experimental results. The model includes parameters that are oxygen and carbon concentrations in the melt in the beginning of the growth, carbon flux form the atmosphere, oxygen fluxes from the crucible and to the atmosphere. Variation of oxygen and carbon concentrations in multicrystalline Si ingots with a diameter of 30 cm and a height of 7.5 cm solidified one-directionally was measured by infra red absorption spectroscopy at room temperature. By fitting the numerical results on the experimental results, the parameters were evaluated. In the modeling we found fruitful suggestions for suppressing and controlling the oxygen and carbon concentrations in multicrystalline Si for solar cells.
KW - A1. Computer simulation
KW - A1. Directional solidification
KW - A1. Impurities
KW - A2. Growth from melt
KW - B2. Semiconducting silicon
KW - B3. Solar cells
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U2 - 10.1016/j.jcrysgro.2012.02.004
DO - 10.1016/j.jcrysgro.2012.02.004
M3 - Article
AN - SCOPUS:84863319777
SN - 0022-0248
VL - 352
SP - 173
EP - 176
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -