@inproceedings{c8d6aabf1ada4797850e4120b737fa0d,
title = "Modeling of minibands for Si/Sc quantum dot superlattice solar cells",
abstract = "The silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cells (SiC-QDSL) with aluminum oxide (A12O3-QDSL) passivation approaches a high short-circuit current (Jsc) of 4.77 mA/cm2 under AMI.5 and one sun illumination due to the quantum enhancement on effective bandgap and minimum transition energy. This value matches well with experimental measurement of 4.75 mA/cm2. To further optimize the conversion efficiency through the geometry of Al2O3-QDSL, we introduce several parameters to define a complete QDSL configuration. A high conversion efficiency of 17.4% is optimized by using the QD geometry from experiment and applying hexagonal QDSL formation with an inter-dot spacing of 0.3 nm.",
keywords = "Conversion efficiency, Geometry parameters, Si/SiC quantum dot, Solar cell",
author = "Tsai, {Yi Chia} and Lee, {Ming Yi} and Yiming Li and Seiji Samukawa",
year = "2017",
language = "English",
series = "Advanced Materials - TechConnect Briefs 2017",
publisher = "TechConnect",
pages = "41--44",
editor = "Bart Romanowicz and Fiona Case and Matthew Laudon and Fiona Case",
booktitle = "Materials for Energy, Efficiency and Sustainability - TechConnect Briefs 2017",
note = "11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference ; Conference date: 14-05-2017 Through 17-05-2017",
}