@inproceedings{7ac7655d7d0d4cddb7fceaec78ba6e00,
title = "Modeling of the excitation of terahertz plasma oscillations in a HEMT by ultrashort optical pulses",
abstract = "Device models for the HEMT-based THz source are developed: an all-analytical model and a model in which the electron systems in the channel is considered analytically in the linear approximation, whereas the transport of the photogenerated electrons and holes is treated invoking an ensemble Monte Carlo particle simulation. Using these models, the frequency-dependent currents and device responsivity as functions of the structural parameters, gate voltage, and energy of the absorbed optical photons are calculated. An example of the dependences calculated for HEMTs with the fundamental plasma frequency fP = 1 THz and different values of the electron mobility μ in the channel is performed.",
keywords = "Analytical models, Charge carrier processes, Frequency, HEMTs, Linear approximation, Monte Carlo methods, Optical pulses, Plasma devices, Plasma sources, Plasma transport processes",
author = "M. Ryzhii and A. Satou and I. Khmyrova and V. Vyurkov and V. Ryzhii and Shur, {M. S.}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 3rd IEEE/LEOS International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003 ; Conference date: 14-10-2003 Through 16-10-2003",
year = "2003",
doi = "10.1109/NUSOD.2003.1259058",
language = "English",
series = "Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "84--85",
booktitle = "Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003",
address = "United States",
}