Abstract
The synthesis of Cs-encapsulated double-walled carbon nanotubes (DWNTs) is realized for the first time by plasma irradiation. Transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) spectrometry confirm that Cs clusters can be doped inside DWNTs. The structural deformation of Cs-encapsulated DWNTs synthesized under different applied negative DC bias voltages from -25 to -150V during plasma irradiation is examined by Raman spectroscopy, and the obtained results indicate that DWNTs have structural merits compared with single-walled carbon nanotubes (SWNTs). In addition, the electronic transport properties of pristine and Cs-encapsulated DWNTs are investigated by their fabrication as the channels of field-effect transistor (FET) devices. We find that, in contrast to pristine ambipolar DWNTs, unipolar n-type semiconducting DWNTs can be created by Cs plasma irradiation.
| Original language | English |
|---|---|
| Pages (from-to) | 8330-8334 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 10 B |
| DOIs | |
| Publication status | Published - 2006 Oct 21 |
Keywords
- Alkali metals
- Double-walled carbon nanotubes
- Electronic transport properties
- Encapsulation
- Plasma applications
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)