Irradiation of semiconductors to energetic electrons/photons plays a vital role in modifying the electrical characteristics and in controlling the carrier life time effectively by creating lattice defects. Photon irradiation effects on silicon power diodes were studied by using bremsstrahlung radiation of peak energy 8 MeV from the Variable Energy Microtron. The relevant electrical characteristics of the diodes at different voltages were measured after irradiating to different doses. The present studies indicate that the bremsstrahlung irradiation modifies the characteristics of the high power diodes.
|Number of pages||4|
|Journal||Radiation Physics and Chemistry|
|Publication status||Published - 1999 Jul 11|
- Power diode characteristics
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