Modification of silicon surface using atomic force microscope with conducting probe

Masatoshi Yasutake; Yasunori Ejiri; Takeo Hattori

Modification of silicon surface using atomic force microscope with conducting probe

Masatoshi Yasutake, Yasunori Ejiri, Takeo Hattori

Research output: Contribution to journal › Article › peer-review

Abstract

It is demonstrated that nearly atomically flat Si(100) surfaces passivated with native oxides can be modified by applying a negative potential to the conducting probe of an atomic force microscope (AFM) with respect to the silicon substrate. It was verified from the detection of O_KLL Auger electrons and Si_LVV Auger electrons excited by the electron beam that silicon surfaces are modified by the oxidation of silicon. This oxidation is enhanced by an electric field.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	32
Issue number	7 B
Publication status	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

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title = "Modification of silicon surface using atomic force microscope with conducting probe",

abstract = "It is demonstrated that nearly atomically flat Si(100) surfaces passivated with native oxides can be modified by applying a negative potential to the conducting probe of an atomic force microscope (AFM) with respect to the silicon substrate. It was verified from the detection of OKLL Auger electrons and SiLVV Auger electrons excited by the electron beam that silicon surfaces are modified by the oxidation of silicon. This oxidation is enhanced by an electric field.",

author = "Masatoshi Yasutake and Yasunori Ejiri and Takeo Hattori",

year = "1993",

language = "English",

volume = "32",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 B",

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T1 - Modification of silicon surface using atomic force microscope with conducting probe

AU - Yasutake, Masatoshi

AU - Ejiri, Yasunori

AU - Hattori, Takeo

PY - 1993

Y1 - 1993

N2 - It is demonstrated that nearly atomically flat Si(100) surfaces passivated with native oxides can be modified by applying a negative potential to the conducting probe of an atomic force microscope (AFM) with respect to the silicon substrate. It was verified from the detection of OKLL Auger electrons and SiLVV Auger electrons excited by the electron beam that silicon surfaces are modified by the oxidation of silicon. This oxidation is enhanced by an electric field.

AB - It is demonstrated that nearly atomically flat Si(100) surfaces passivated with native oxides can be modified by applying a negative potential to the conducting probe of an atomic force microscope (AFM) with respect to the silicon substrate. It was verified from the detection of OKLL Auger electrons and SiLVV Auger electrons excited by the electron beam that silicon surfaces are modified by the oxidation of silicon. This oxidation is enhanced by an electric field.

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M3 - Article

AN - SCOPUS:0027628485

SN - 0021-4922

VL - 32

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 7 B

ER -

Modification of silicon surface using atomic force microscope with conducting probe

Abstract

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