Modulation-Doped Field-Effect Transistors with an 8-nm InGaAs/InAs/InGaAs Quantum Well

D. Xu, J. Osaka, Y. Umeda, T. Suemitsu, Y. Yamane, Y. Ishii

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We show that the channel thickness of modulation-doped field-effect transistors (MODFET's) based on an InAlAs/InGaAs heterojunction can be reduced from 15 to 8 nm without any degradation of the main DC and RF figures of merits. Furthermore, short-channel effects, which are pronounced in sub-0.1-μm devices, can be effectively suppressed by this thin-channel design. The retainment of high performance and alleviation of short-channel effects are attributed to the excellent two-dimensional electron gas (2-DEG) confinement by the inserted InAs layer. The successful channel thinning opens up the possibility of employing high-quality thin-channel structures for MODFET's with gate lengths below 0.05 μm.

Original languageEnglish
Pages (from-to)109-112
Number of pages4
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - 1999 Mar


  • Epitaxial growth
  • High-speed circuits/devices
  • MODFET's
  • Semiconductor device fabrication
  • Semiconductor growth
  • Semiconductor heterojunction


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