TY - JOUR
T1 - Modulation of noise in submicron GaAs/AlGaAs hall devices by gating
AU - Li, Yongqing
AU - Ren, Cong
AU - Xiong, Peng
AU - Von Molnár, Stephan
AU - Ohno, Yuzo
AU - Ohno, Hideo
N1 - Funding Information:
We gratefully thank J. Müller for resistance fluctuation measurements. We acknowledge stimulating discussions with B. Raquet, P. Schlottmann, S. J. Bending, P. Stiles, and R. S. Popovic. This work was supported by NSF DMR and DARPA SPINS. The work at Tohoku University was supported partially by a Grant-in-Aid from the Ministry of Education, Japan, and by the Japan Society for the Promotion of Science.
PY - 2004/12/10
Y1 - 2004/12/10
N2 - A systematic characterization of fluctuation in submicron Hall devices based on GaAs/AlGaAs two dimensional electron gas heterostructures at temperature between 1.5 to 60 k was presented. A variety of noise spectra, from 1/f to Lorentzian, were obtained by gating the hall devices. The detailed study of the noise shows that the large gate voltage dependence cannot be explained by change in the electron density or mobility. The data suggest that the thermally activated switching processes related to remote impurities were responsible for the observed noise behavior.
AB - A systematic characterization of fluctuation in submicron Hall devices based on GaAs/AlGaAs two dimensional electron gas heterostructures at temperature between 1.5 to 60 k was presented. A variety of noise spectra, from 1/f to Lorentzian, were obtained by gating the hall devices. The detailed study of the noise shows that the large gate voltage dependence cannot be explained by change in the electron density or mobility. The data suggest that the thermally activated switching processes related to remote impurities were responsible for the observed noise behavior.
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U2 - 10.1103/PhysRevLett.93.246602
DO - 10.1103/PhysRevLett.93.246602
M3 - Article
AN - SCOPUS:42749098540
SN - 0031-9007
VL - 93
JO - Physical Review Letters
JF - Physical Review Letters
IS - 24
M1 - 246602
ER -