Modulation of noise in submicron GaAs/AlGaAs hall devices by gating

Yongqing Li, Cong Ren, Peng Xiong, Stephan Von Molnár, Yuzo Ohno, Hideo Ohno

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35 Citations (Scopus)


A systematic characterization of fluctuation in submicron Hall devices based on GaAs/AlGaAs two dimensional electron gas heterostructures at temperature between 1.5 to 60 k was presented. A variety of noise spectra, from 1/f to Lorentzian, were obtained by gating the hall devices. The detailed study of the noise shows that the large gate voltage dependence cannot be explained by change in the electron density or mobility. The data suggest that the thermally activated switching processes related to remote impurities were responsible for the observed noise behavior.

Original languageEnglish
Article number246602
JournalPhysical Review Letters
Issue number24
Publication statusPublished - 2004 Dec 10


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