Molecular beam epitaxial growth of (GaAs)//m/(InAs)//n superlattice semiconductors is reported. The Reflection Electron Diffraction (RED) is used to monitor the growth process. The RED intensity oscillation is shown to correspond to the monolayer formation even for GaAs-InAs system where 7% lattice mismatch is present. The maximum thickness for maintaining two dimensional growth of InAs on GaAs substrate is estimated to be approximately 5 monolayers (15 Angstrom) from RED. The growth of superlattice semiconductors is confirmed by X-ray diffraction.