Molecular Beam Epitaxy and Properties of Cr-Doped GaSb

E. Abe; K. Sato; F. Matsukura; J. H. Zhao; Y. Ohno; H. Ohno

doi:10.1023/b:josc.0000034257.19841.be

Molecular Beam Epitaxy and Properties of Cr-Doped GaSb

E. Abe, K. Sato, F. Matsukura, J. H. Zhao, Y. Ohno, H. Ohno

Leadership

Tohoku University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Molecular beam epitaxy of GaSb films, with several percents of Cr, and their characterization are reported. Their electric and magnetic properties depend on their growth temperature and Cr composition. Although magnetization measurements reveal that all the films are ferromagnetic even at room temperature, this is most probably due to the precipitation of ferromagnetic zincblende CrSb. The magnetotransport measurements show that Cr spins may couple antiferromagnetically in GaSb host matrix.

Original language	English
Pages (from-to)	349-352
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	17
Issue number	3
DOIs	https://doi.org/10.1023/b:josc.0000034257.19841.be
Publication status	Published - 2004

Keywords

Cr
Gasb
Iii-V semiconductor
Magnetic semiconductor
Molecular beam epitaxy

Access to Document

10.1023/b:josc.0000034257.19841.be

Cite this

@article{086552d2351241b4ad035c7e0981e40d,

title = "Molecular Beam Epitaxy and Properties of Cr-Doped GaSb",

abstract = "Molecular beam epitaxy of GaSb films, with several percents of Cr, and their characterization are reported. Their electric and magnetic properties depend on their growth temperature and Cr composition. Although magnetization measurements reveal that all the films are ferromagnetic even at room temperature, this is most probably due to the precipitation of ferromagnetic zincblende CrSb. The magnetotransport measurements show that Cr spins may couple antiferromagnetically in GaSb host matrix.",

keywords = "Cr, Gasb, Iii-V semiconductor, Magnetic semiconductor, Molecular beam epitaxy",

author = "E. Abe and K. Sato and F. Matsukura and Zhao, {J. H.} and Y. Ohno and H. Ohno",

note = "Funding Information: This work was partly supported by a Grant-in-Aids from the Japan Promotion of Science (no. 12305001) and partly by the IT-Program of RR2002 from MEXT.",

year = "2004",

doi = "10.1023/b:josc.0000034257.19841.be",

language = "English",

volume = "17",

pages = "349--352",

journal = "Journal of Superconductivity and Novel Magnetism",

issn = "1557-1939",

publisher = "Springer New York",

number = "3",

}

TY - JOUR

T1 - Molecular Beam Epitaxy and Properties of Cr-Doped GaSb

AU - Abe, E.

AU - Sato, K.

AU - Matsukura, F.

AU - Zhao, J. H.

AU - Ohno, Y.

AU - Ohno, H.

N1 - Funding Information: This work was partly supported by a Grant-in-Aids from the Japan Promotion of Science (no. 12305001) and partly by the IT-Program of RR2002 from MEXT.

PY - 2004

Y1 - 2004

N2 - Molecular beam epitaxy of GaSb films, with several percents of Cr, and their characterization are reported. Their electric and magnetic properties depend on their growth temperature and Cr composition. Although magnetization measurements reveal that all the films are ferromagnetic even at room temperature, this is most probably due to the precipitation of ferromagnetic zincblende CrSb. The magnetotransport measurements show that Cr spins may couple antiferromagnetically in GaSb host matrix.

AB - Molecular beam epitaxy of GaSb films, with several percents of Cr, and their characterization are reported. Their electric and magnetic properties depend on their growth temperature and Cr composition. Although magnetization measurements reveal that all the films are ferromagnetic even at room temperature, this is most probably due to the precipitation of ferromagnetic zincblende CrSb. The magnetotransport measurements show that Cr spins may couple antiferromagnetically in GaSb host matrix.

KW - Cr

KW - Gasb

KW - Iii-V semiconductor

KW - Magnetic semiconductor

KW - Molecular beam epitaxy

UR - http://www.scopus.com/inward/record.url?scp=3142757191&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142757191&partnerID=8YFLogxK

U2 - 10.1023/b:josc.0000034257.19841.be

DO - 10.1023/b:josc.0000034257.19841.be

M3 - Article

AN - SCOPUS:3142757191

SN - 1557-1939

VL - 17

SP - 349

EP - 352

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

IS - 3

ER -

Molecular Beam Epitaxy and Properties of Cr-Doped GaSb

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this