Molecular Beam Epitaxy and Properties of Cr-Doped GaSb

E. Abe, K. Sato, F. Matsukura, J. H. Zhao, Y. Ohno, H. Ohno

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Molecular beam epitaxy of GaSb films, with several percents of Cr, and their characterization are reported. Their electric and magnetic properties depend on their growth temperature and Cr composition. Although magnetization measurements reveal that all the films are ferromagnetic even at room temperature, this is most probably due to the precipitation of ferromagnetic zincblende CrSb. The magnetotransport measurements show that Cr spins may couple antiferromagnetically in GaSb host matrix.

Original languageEnglish
Pages (from-to)349-352
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Issue number3
Publication statusPublished - 2004


  • Cr
  • Gasb
  • Iii-V semiconductor
  • Magnetic semiconductor
  • Molecular beam epitaxy


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