Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

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14 Citations (Scopus)


Low-temperature molecular beam epitaxy has enabled synthesis of magnetic III-V semiconductors that can be epitaxially integrated into nonmagnetic III-V heterostructures. Carrier-induced ferromagnetism in these magnetic III-Vs has allowed us to explore spin-dependent phenomena previously not accessible in semiconductors. I review preparation and properties of ferromagnetic III-Vs together with isothermal and reversible electric field control of ferromagnetism.

Original languageEnglish
Pages (from-to)285-291
Number of pages7
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2003 Apr
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 2002 Sept 152002 Sept 20


  • A3. Molecular beam epitaxy
  • B2. Magnetic materials
  • B2. Semiconducting III-V materials
  • B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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