Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

Hideo Ohno

doi:10.1016/S0022-0248(02)02290-X

Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

Hideo Ohno

Leadership

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

Low-temperature molecular beam epitaxy has enabled synthesis of magnetic III-V semiconductors that can be epitaxially integrated into nonmagnetic III-V heterostructures. Carrier-induced ferromagnetism in these magnetic III-Vs has allowed us to explore spin-dependent phenomena previously not accessible in semiconductors. I review preparation and properties of ferromagnetic III-Vs together with isothermal and reversible electric field control of ferromagnetism.

Original language	English
Pages (from-to)	285-291
Number of pages	7
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02290-X
Publication status	Published - 2003 Apr
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: 2002 Sept 15 → 2002 Sept 20

Keywords

A3. Molecular beam epitaxy
B2. Magnetic materials
B2. Semiconducting III-V materials
B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(02)02290-X

Cite this

@article{953b51f05f754bdb8250ee4059f8588b,

title = "Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors",

abstract = "Low-temperature molecular beam epitaxy has enabled synthesis of magnetic III-V semiconductors that can be epitaxially integrated into nonmagnetic III-V heterostructures. Carrier-induced ferromagnetism in these magnetic III-Vs has allowed us to explore spin-dependent phenomena previously not accessible in semiconductors. I review preparation and properties of ferromagnetic III-Vs together with isothermal and reversible electric field control of ferromagnetism.",

keywords = "A3. Molecular beam epitaxy, B2. Magnetic materials, B2. Semiconducting III-V materials, B3. Heterojunction semiconductor devices",

author = "Hideo Ohno",

note = "Funding Information: I am grateful for fruitful collaborations and discussions with a number of colleagues; among them are F. Matsukura, Y. Ohno, and T. Dietl. This work was partly supported by a Grant-in-Aid (No. 12305001) and the Research for the Future Program both from JSPS, and partly by the IT-Program of Research Revolution 2002 (RR2002) from MEXT.; Proceedings of the Molecular Beam Epitaxy 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

year = "2003",

month = apr,

doi = "10.1016/S0022-0248(02)02290-X",

language = "English",

volume = "251",

pages = "285--291",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

AU - Ohno, Hideo

N1 - Funding Information: I am grateful for fruitful collaborations and discussions with a number of colleagues; among them are F. Matsukura, Y. Ohno, and T. Dietl. This work was partly supported by a Grant-in-Aid (No. 12305001) and the Research for the Future Program both from JSPS, and partly by the IT-Program of Research Revolution 2002 (RR2002) from MEXT.

PY - 2003/4

Y1 - 2003/4

N2 - Low-temperature molecular beam epitaxy has enabled synthesis of magnetic III-V semiconductors that can be epitaxially integrated into nonmagnetic III-V heterostructures. Carrier-induced ferromagnetism in these magnetic III-Vs has allowed us to explore spin-dependent phenomena previously not accessible in semiconductors. I review preparation and properties of ferromagnetic III-Vs together with isothermal and reversible electric field control of ferromagnetism.

AB - Low-temperature molecular beam epitaxy has enabled synthesis of magnetic III-V semiconductors that can be epitaxially integrated into nonmagnetic III-V heterostructures. Carrier-induced ferromagnetism in these magnetic III-Vs has allowed us to explore spin-dependent phenomena previously not accessible in semiconductors. I review preparation and properties of ferromagnetic III-Vs together with isothermal and reversible electric field control of ferromagnetism.

KW - A3. Molecular beam epitaxy

KW - B2. Magnetic materials

KW - B2. Semiconducting III-V materials

KW - B3. Heterojunction semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=0037380410&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037380410&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02290-X

DO - 10.1016/S0022-0248(02)02290-X

M3 - Conference article

AN - SCOPUS:0037380410

SN - 0022-0248

VL - 251

SP - 285

EP - 291

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this