Molecular beam epitaxy growth of the highly conductive oxide SrMoO3

Hiroshi Takatsu; Naoya Yamashina; Daisuke Shiga; Ryu Yukawa; Koji Horiba; Hiroshi Kumigashira; Takahito Terashima; Hiroshi Kageyama

doi:10.1016/j.jcrysgro.2020.125685

Molecular beam epitaxy growth of the highly conductive oxide SrMoO₃

Hiroshi Takatsu, Naoya Yamashina, Daisuke Shiga, Ryu Yukawa, Koji Horiba, Hiroshi Kumigashira, Takahito Terashima, Hiroshi Kageyama

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

SrMoO₃ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO₃ using molecular beam epitaxy (MBE) technique under low oxygen-flow rate. Introduction of SrTiO₃ buffer layers of 4–8 unit cells between the film and the (0 0 1)-oriented SrTiO₃ or KTaO₃ substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO₃ film is also verified by angle resolved photoemission spectroscopy (ARPES) measurements showing a clear Fermi surface.

Original language	English
Article number	125685
Journal	Journal of Crystal Growth
Volume	543
DOIs	https://doi.org/10.1016/j.jcrysgro.2020.125685
Publication status	Published - 2020 Aug 1

Keywords

A1. Characterization
A3. Molecular beam epitaxy
B1. Perovskite oxides
B2. Conducting materials

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10.1016/j.jcrysgro.2020.125685

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@article{b7c724b78b514b73b074cec67e75a1f6,

title = "Molecular beam epitaxy growth of the highly conductive oxide SrMoO3 ",

abstract = "SrMoO3 is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO3 using molecular beam epitaxy (MBE) technique under low oxygen-flow rate. Introduction of SrTiO3 buffer layers of 4–8 unit cells between the film and the (0 0 1)-oriented SrTiO3 or KTaO3 substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO3 film is also verified by angle resolved photoemission spectroscopy (ARPES) measurements showing a clear Fermi surface.",

keywords = "A1. Characterization, A3. Molecular beam epitaxy, B1. Perovskite oxides, B2. Conducting materials",

author = "Hiroshi Takatsu and Naoya Yamashina and Daisuke Shiga and Ryu Yukawa and Koji Horiba and Hiroshi Kumigashira and Takahito Terashima and Hiroshi Kageyama",

note = "Funding Information: This work was supported by CREST ( JPMJCR1421 ) and JSPS KAKENHI Grants (No. 16H06439 and No. 17H04849 ). Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = aug,

day = "1",

doi = "10.1016/j.jcrysgro.2020.125685",

language = "English",

volume = "543",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Molecular beam epitaxy growth of the highly conductive oxide SrMoO3

AU - Takatsu, Hiroshi

AU - Yamashina, Naoya

AU - Shiga, Daisuke

AU - Yukawa, Ryu

AU - Horiba, Koji

AU - Kumigashira, Hiroshi

AU - Terashima, Takahito

AU - Kageyama, Hiroshi

PY - 2020/8/1

Y1 - 2020/8/1

N2 - SrMoO3 is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO3 using molecular beam epitaxy (MBE) technique under low oxygen-flow rate. Introduction of SrTiO3 buffer layers of 4–8 unit cells between the film and the (0 0 1)-oriented SrTiO3 or KTaO3 substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO3 film is also verified by angle resolved photoemission spectroscopy (ARPES) measurements showing a clear Fermi surface.

AB - SrMoO3 is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO3 using molecular beam epitaxy (MBE) technique under low oxygen-flow rate. Introduction of SrTiO3 buffer layers of 4–8 unit cells between the film and the (0 0 1)-oriented SrTiO3 or KTaO3 substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO3 film is also verified by angle resolved photoemission spectroscopy (ARPES) measurements showing a clear Fermi surface.

KW - A1. Characterization

KW - A3. Molecular beam epitaxy

KW - B1. Perovskite oxides

KW - B2. Conducting materials

UR - http://www.scopus.com/inward/record.url?scp=85085193762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85085193762&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2020.125685

DO - 10.1016/j.jcrysgro.2020.125685

M3 - Article

AN - SCOPUS:85085193762

SN - 0022-0248

VL - 543

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 125685

ER -

Molecular beam epitaxy growth of the highly conductive oxide SrMoO₃

Abstract

Keywords

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