TY - JOUR
T1 - Molecular beam epitaxy of ferromagnetic γ′-Fe4N thin films on LaAlO3(1 0 0), SrTiO3(1 0 0) and MgO(1 0 0) substrates
AU - Ito, Keita
AU - Hyoung Lee, Geun
AU - Akinaga, Hiro
AU - Suemasu, Takashi
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research on the Priority Area of “Creation and control of spin current” ( 19048029 ) from the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) and by the NanoProcessing Partnership Platform (NPPP) at AIST, Tsukuba. High-purity 5N–Fe was supplied by Prof. M. Isshiki and Dr. M. Uchikoshi of Tohoku University. Several XRD measurements were done with the help of the Rigaku Corporation. The authors also thank Dr. N. Ota and Prof. K. Asakawa of the Tsukuba Nano-Tech Human Resource Development Program at the University of Tsukuba for useful discussions.
PY - 2011/5/1
Y1 - 2011/5/1
N2 - We have attempted to grow a-axis-oriented γ′-Fe4N epitaxial films with smooth surfaces at around 400 °C on LaAlO 3(LAO)(1 0 0), SrTiO3(STO)(1 0 0) and MgO(1 0 0) substrates by molecular beam epitaxy using solid Fe and a radio-frequency NH3 plasma as the Fe and N sources, respectively. The lattice mismatch of these substrates to γ′-Fe4N is 0%, 3% and 11%, respectively. Epitaxial growth of γ′-Fe4N films was successfully achieved on the STO(1 0 0) and LAO(1 0 0) substrates. It was found from reflection high-energy electron diffraction and X-ray diffraction that the a-axis orientation of γ′-Fe4N was degraded with increasing lattice mismatch. High-angle annular dark-field scanning transmission electron microscopy and electron energy-loss spectroscopy measurements showed that amorphous AlO layers were present at the γ′-Fe4N/LAO interface.
AB - We have attempted to grow a-axis-oriented γ′-Fe4N epitaxial films with smooth surfaces at around 400 °C on LaAlO 3(LAO)(1 0 0), SrTiO3(STO)(1 0 0) and MgO(1 0 0) substrates by molecular beam epitaxy using solid Fe and a radio-frequency NH3 plasma as the Fe and N sources, respectively. The lattice mismatch of these substrates to γ′-Fe4N is 0%, 3% and 11%, respectively. Epitaxial growth of γ′-Fe4N films was successfully achieved on the STO(1 0 0) and LAO(1 0 0) substrates. It was found from reflection high-energy electron diffraction and X-ray diffraction that the a-axis orientation of γ′-Fe4N was degraded with increasing lattice mismatch. High-angle annular dark-field scanning transmission electron microscopy and electron energy-loss spectroscopy measurements showed that amorphous AlO layers were present at the γ′-Fe4N/LAO interface.
KW - A3. Molecular beam epitaxy
KW - B2. LaAlO
KW - B2. MgO
KW - B2. SrTiO
KW - B2. γ′-FeN
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U2 - 10.1016/j.jcrysgro.2011.03.019
DO - 10.1016/j.jcrysgro.2011.03.019
M3 - Article
AN - SCOPUS:79954569173
SN - 0022-0248
VL - 322
SP - 63
EP - 68
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -