Molecular Beam Epitaxy Study of Bi2Sr2CuOx Using NO2 as an Oxidizing Agent

Shunji Watanabe; Maki Kawai; Takashi Hanada

doi:10.1143/JJAP.29.L1111

Molecular Beam Epitaxy Study of Bi₂Sr₂CuO_x Using NO₂ as an Oxidizing Agent

Shunji Watanabe, Maki Kawai, Takashi Hanada

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Molecular beam epitaxy (MBE) of Bi₂Sr₂CuO_x films has been studied using NO₂ as an oxidizing agent. The in situ RHEED and the XPS observations have shown that a two-dimensional layer of the Bi₂Sr₂CuO_x phase is formed on a SrTiO₃(100) surface even at 300°C under 2×10^-7 Torr of NO₂.

Original language	English
Pages (from-to)	L1111-L1113
Journal	Japanese journal of applied physics
Volume	29
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.29.L1111
Publication status	Published - 1990 Jul
Externally published	Yes

Keywords

Bisrcuo
Mbe
No
Srtio(100)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.29.L1111

Cite this

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abstract = "Molecular beam epitaxy (MBE) of Bi2Sr2CuOx films has been studied using NO2 as an oxidizing agent. The in situ RHEED and the XPS observations have shown that a two-dimensional layer of the Bi2Sr2CuOx phase is formed on a SrTiO3(100) surface even at 300°C under 2×10-7 Torr of NO2.",

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AB - Molecular beam epitaxy (MBE) of Bi2Sr2CuOx films has been studied using NO2 as an oxidizing agent. The in situ RHEED and the XPS observations have shown that a two-dimensional layer of the Bi2Sr2CuOx phase is formed on a SrTiO3(100) surface even at 300°C under 2×10-7 Torr of NO2.

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