Molecular-mediated single-electron devices operating at room temperature

Touichiro Goto; Katsuhiko Degawa; Hiroshi Inokawa; Kazuaki Furukawa; Hiroshi Nakashima; Koji Sumitomo; Takafumi Aoki; Keiichi Torimitsu

doi:10.1143/JJAP.45.4285

Molecular-mediated single-electron devices operating at room temperature

Touichiro Goto, Katsuhiko Degawa, Hiroshi Inokawa, Kazuaki Furukawa, Hiroshi Nakashima, Koji Sumitomo, Takafumi Aoki, Keiichi Torimitsu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report the electrical characteristics of gold nanogap devices modified by conjugated molecules with thiol endgroups. Gold nanogap electrodes with a nominal gap distance of between 1-2nm were fabricated by double oblique deposition from opposite directions. The electrodes were then immersed in 4,4′-p-terphenyldithiol (TPDT) solutions to enhance conductance. Using the substrate as a gate electrode, we observed a large Coulomb diamond at room temperature with a charging energy as large as 0.25 eV. The characteristics of the device can be explained on the basis of a multi-metallic-island system. It is considered that ultra small gold islands are formed during the metal deposition and that the molecules bridging metallic islands and electrodes work as tunnel junctions.

Original language	English
Pages (from-to)	4285-4289
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	5 A
DOIs	https://doi.org/10.1143/JJAP.45.4285
Publication status	Published - 2006 May 9

Keywords

Coulomb blockade
Molecular devices
Nanogap electrodes
Self-assembled monolayers (SAMs)
Single-electron transistors (SETs)

Access to Document

10.1143/JJAP.45.4285

Cite this

@article{7a7c37631192497cad8fcc98bc971855,

title = "Molecular-mediated single-electron devices operating at room temperature",

abstract = "We report the electrical characteristics of gold nanogap devices modified by conjugated molecules with thiol endgroups. Gold nanogap electrodes with a nominal gap distance of between 1-2nm were fabricated by double oblique deposition from opposite directions. The electrodes were then immersed in 4,4′-p-terphenyldithiol (TPDT) solutions to enhance conductance. Using the substrate as a gate electrode, we observed a large Coulomb diamond at room temperature with a charging energy as large as 0.25 eV. The characteristics of the device can be explained on the basis of a multi-metallic-island system. It is considered that ultra small gold islands are formed during the metal deposition and that the molecules bridging metallic islands and electrodes work as tunnel junctions.",

keywords = "Coulomb blockade, Molecular devices, Nanogap electrodes, Self-assembled monolayers (SAMs), Single-electron transistors (SETs)",

author = "Touichiro Goto and Katsuhiko Degawa and Hiroshi Inokawa and Kazuaki Furukawa and Hiroshi Nakashima and Koji Sumitomo and Takafumi Aoki and Keiichi Torimitsu",

year = "2006",

month = may,

day = "9",

doi = "10.1143/JJAP.45.4285",

language = "English",

volume = "45",

pages = "4285--4289",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 A",

}

TY - JOUR

T1 - Molecular-mediated single-electron devices operating at room temperature

AU - Goto, Touichiro

AU - Degawa, Katsuhiko

AU - Inokawa, Hiroshi

AU - Furukawa, Kazuaki

AU - Nakashima, Hiroshi

AU - Sumitomo, Koji

AU - Aoki, Takafumi

AU - Torimitsu, Keiichi

PY - 2006/5/9

Y1 - 2006/5/9

N2 - We report the electrical characteristics of gold nanogap devices modified by conjugated molecules with thiol endgroups. Gold nanogap electrodes with a nominal gap distance of between 1-2nm were fabricated by double oblique deposition from opposite directions. The electrodes were then immersed in 4,4′-p-terphenyldithiol (TPDT) solutions to enhance conductance. Using the substrate as a gate electrode, we observed a large Coulomb diamond at room temperature with a charging energy as large as 0.25 eV. The characteristics of the device can be explained on the basis of a multi-metallic-island system. It is considered that ultra small gold islands are formed during the metal deposition and that the molecules bridging metallic islands and electrodes work as tunnel junctions.

AB - We report the electrical characteristics of gold nanogap devices modified by conjugated molecules with thiol endgroups. Gold nanogap electrodes with a nominal gap distance of between 1-2nm were fabricated by double oblique deposition from opposite directions. The electrodes were then immersed in 4,4′-p-terphenyldithiol (TPDT) solutions to enhance conductance. Using the substrate as a gate electrode, we observed a large Coulomb diamond at room temperature with a charging energy as large as 0.25 eV. The characteristics of the device can be explained on the basis of a multi-metallic-island system. It is considered that ultra small gold islands are formed during the metal deposition and that the molecules bridging metallic islands and electrodes work as tunnel junctions.

KW - Coulomb blockade

KW - Molecular devices

KW - Nanogap electrodes

KW - Self-assembled monolayers (SAMs)

KW - Single-electron transistors (SETs)

UR - http://www.scopus.com/inward/record.url?scp=33646891735&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646891735&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.4285

DO - 10.1143/JJAP.45.4285

M3 - Article

AN - SCOPUS:33646891735

SN - 0021-4922

VL - 45

SP - 4285

EP - 4289

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5 A

ER -

Molecular-mediated single-electron devices operating at room temperature

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this