Abstract
Molecular states in a single pair of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single-electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We observe a series of well-formed Coulomb diamonds with charging energy of less than 5 meV, which are much smaller than those reported previously. This is because electrons are occupied in molecular states, which are spread over both dots and occupy a large volume. In the measurement of ground and excited state single-electron transport spectra with a magnetic field, we find that the electrons are sequentially trapped in symmetric and anti-symmetric states. This result is well explained by numerical calculation using an exact diagonalization method.
Original language | English |
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Pages (from-to) | 159-164 |
Number of pages | 6 |
Journal | Superlattices and Microstructures |
Volume | 34 |
Issue number | 3-6 |
DOIs | |
Publication status | Published - 2003 Sept |
Externally published | Yes |
Keywords
- Artificial molecule
- InAs self-assembled quantum dots
- Single-electron transistor
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering