Molybdenum oxide-base phase change resistive switching material

Yukiko Ogawa; Satoshi Shindo; Yuji Sutou; Junichi Koike

doi:10.1063/1.5000410

Molybdenum oxide-base phase change resistive switching material

Yukiko Ogawa, Satoshi Shindo, Yuji Sutou, Junichi Koike

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We investigated the temperature dependence of electrical resistance of a reactively sputtered Mo-oxide film with a composition near MoO₃ and found that the sputtered Mo-oxide film shows a large electrical resistance drop of much more than 10⁴-fold at over 350 °C. Such a large drop in electrical resistance was found to be caused by a phase transition from an amorphous state to a crystalline state. It was confirmed that a W/Mo-oxide/W device shows a typical resistive switching effect of a phase change random access memory material and exhibits reversible resistive switching by the application of unidirectional set and reset voltage. The resistance contrast of the device had a large value of about 10⁵-10⁶. Furthermore, the Mo-oxide film showed much better thermal stability in the amorphous state than conventional phase change materials. These results indicate that the Mo-oxide film is a promising oxide-base phase change material for phase change random access memory.

Original language	English
Article number	163105
Journal	Applied Physics Letters
Volume	111
Issue number	16
DOIs	https://doi.org/10.1063/1.5000410
Publication status	Published - 2017 Oct 16

Access to Document

10.1063/1.5000410

Cite this

@article{7fdb781b4d2f4b52b73e2f914e87618a,

title = "Molybdenum oxide-base phase change resistive switching material",

abstract = "We investigated the temperature dependence of electrical resistance of a reactively sputtered Mo-oxide film with a composition near MoO3 and found that the sputtered Mo-oxide film shows a large electrical resistance drop of much more than 104-fold at over 350 °C. Such a large drop in electrical resistance was found to be caused by a phase transition from an amorphous state to a crystalline state. It was confirmed that a W/Mo-oxide/W device shows a typical resistive switching effect of a phase change random access memory material and exhibits reversible resistive switching by the application of unidirectional set and reset voltage. The resistance contrast of the device had a large value of about 105-106. Furthermore, the Mo-oxide film showed much better thermal stability in the amorphous state than conventional phase change materials. These results indicate that the Mo-oxide film is a promising oxide-base phase change material for phase change random access memory.",

author = "Yukiko Ogawa and Satoshi Shindo and Yuji Sutou and Junichi Koike",

note = "Funding Information: The authors thank Mr. S. Hatayama of Tohoku University for his help in the analysis of DSC results. The authors also would like to thank Mr. T. Saito of Tohoku University for his help in preparing the TEM sample. This work was supported by KAKENHI (Grant No. 15H04113). Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = oct,

day = "16",

doi = "10.1063/1.5000410",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Molybdenum oxide-base phase change resistive switching material

AU - Ogawa, Yukiko

AU - Shindo, Satoshi

AU - Sutou, Yuji

AU - Koike, Junichi

N1 - Funding Information: The authors thank Mr. S. Hatayama of Tohoku University for his help in the analysis of DSC results. The authors also would like to thank Mr. T. Saito of Tohoku University for his help in preparing the TEM sample. This work was supported by KAKENHI (Grant No. 15H04113). Publisher Copyright: © 2017 Author(s).

PY - 2017/10/16

Y1 - 2017/10/16

N2 - We investigated the temperature dependence of electrical resistance of a reactively sputtered Mo-oxide film with a composition near MoO3 and found that the sputtered Mo-oxide film shows a large electrical resistance drop of much more than 104-fold at over 350 °C. Such a large drop in electrical resistance was found to be caused by a phase transition from an amorphous state to a crystalline state. It was confirmed that a W/Mo-oxide/W device shows a typical resistive switching effect of a phase change random access memory material and exhibits reversible resistive switching by the application of unidirectional set and reset voltage. The resistance contrast of the device had a large value of about 105-106. Furthermore, the Mo-oxide film showed much better thermal stability in the amorphous state than conventional phase change materials. These results indicate that the Mo-oxide film is a promising oxide-base phase change material for phase change random access memory.

AB - We investigated the temperature dependence of electrical resistance of a reactively sputtered Mo-oxide film with a composition near MoO3 and found that the sputtered Mo-oxide film shows a large electrical resistance drop of much more than 104-fold at over 350 °C. Such a large drop in electrical resistance was found to be caused by a phase transition from an amorphous state to a crystalline state. It was confirmed that a W/Mo-oxide/W device shows a typical resistive switching effect of a phase change random access memory material and exhibits reversible resistive switching by the application of unidirectional set and reset voltage. The resistance contrast of the device had a large value of about 105-106. Furthermore, the Mo-oxide film showed much better thermal stability in the amorphous state than conventional phase change materials. These results indicate that the Mo-oxide film is a promising oxide-base phase change material for phase change random access memory.

UR - http://www.scopus.com/inward/record.url?scp=85031806370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031806370&partnerID=8YFLogxK

U2 - 10.1063/1.5000410

DO - 10.1063/1.5000410

M3 - Article

AN - SCOPUS:85031806370

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163105

ER -

Molybdenum oxide-base phase change resistive switching material

Abstract

Access to Document

Other files and links

Fingerprint

Cite this